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參數(shù)資料
| 型號： | IRFD110 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）\u003d 0.54ohm，身份證\u003d 1.0安培） |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 52K |
| 代理商： | IRFD110 |
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FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
FIGURE 18. GATE CHARGE TEST CIRCUIT
FIGURE 19. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
0.3
μ
F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
g(REF)
0
(ISOLATED
SUPPLY)
V
DS
0.2
μ
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
RESISTOR
I
G
CURRENT
SAMPLING
RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
g(REF)
0
IRFD110
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFD1Z0 | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
| IRFD1Z1 | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
| IRFD1Z2 | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
| IRFD1Z3 | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
| IRFD214 | Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.45A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFD110PBF | 功能描述:MOSFET 100V Single N-Channel HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD110PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRFD110R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR |
| IRFD110U | 制造商:n/a 功能描述:IRFD110U LOC: N9B9B |
| IRFD111 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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