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參數(shù)資料
| 型號： | IRFD110 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）\u003d 0.54ohm，身份證\u003d 1.0安培） |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 52K |
| 代理商： | IRFD110 |
4-272
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
1
2
3
4
5
5
0
V
GS
= 9V
V
GS
= 4V
V
GS
= 5V
V
GS
= 7V
V
GS
= 10V
V
GS
= 8V
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
3
2
0
8
6
4
2
0
10
1
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= -55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
> I
D(ON)
x r
DS(ON)MAX
0
1.0
2.0
2
4
6
r
D
,
I
D
, DRAIN CURRENT (A)
8
0
0.5
1.5
V
GS
= 10V
V
GS
= 20V
O
)
DUTY CYCLE = 0.5% MAX
2
μ
s PULSE TEST
N
2.5
1.5
1.0
0.5
0
-60
-20
T
J
, JUNCTION TEMPERATURE (
o
C)
40
120
140
2.0
80
100
60
20
0
-40
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 0.8A
1.25
0.95
0.85
0.75
-60
-20
T
J
, JUNCTION TEMPERATURE (
o
C)
20
N
B
60
100
140
1.05
1.15
-40
0
40
80
120
I
D
= 250
μ
A
500
100
0
0
20
50
C
300
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
400
200
10
30
C
ISS
C
OSS
C
RSS
40
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
IRFD110
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相關(guān)代理商/技術(shù)參數(shù) |
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