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參數(shù)資料
| 型號： | IRFD1Z3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 400 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 57K |
| 代理商： | IRFD1Z3 |
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFD1Z0
100
100
0.5
4.0
±
20
1.0
0.008
-55 to 150
IRFD1Z1
60
60
0.5
4.0
±
20
1.0
0.008
-55 to 150
IRFD1Z2
100
100
0.4
3.2
±
20
1.0
0.008
-55 to 150
IRFD1Z3
60
60
0.4
3.2
±
20
1.0
0.008
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . .V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . .T
pkg
300
260
300
260
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
IRFD1Z0, IRFD1Z2
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (See Figure 9)
100
-
-
V
IRFD1Z1, IRFD1Z3
60
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
μ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V,
T
C
= 125
o
C
-
-
250
μ
A
On-State Drain Current (Note 2)
IRFD1Z0, IRFD1Z1
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
(See Figure 6)
0.5
-
-
A
IRFD1Z2, IRFD1Z3
0.4
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
IRFD1Z0, IRFD1Z1
r
DS(ON)
I
D
= 0.25A, V
GS
= 10V (See Figures 7, 8)
-
2.2
2.4
IRFD1Z2, IRFD1Z3
-
2.8
3.2
Forward Transconductance (Note 2)
g
fs
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 0.25A
0.25
0.35
-
S
Turn-On Delay Time
t
d(ON)
V
DD
0.5 x Rated BV
DSS
, I
D
= 0.25A,
R
G
= 50
(Figures 14, 15, 16)
R
L
= 198
for BV
DSS
= 100V
R
L
= 118
for BV
DSS
= 60V
MOSFET Switching Times are Essentially Inde-
pendent of Operating Temperature
-
10
20
ns
Rise Time
t
r
-
15
25
ns
Turn-Off Delay Time
t
d(OFF)
-
15
25
ns
Fall Time
t
f
-
10
20
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 1.2A, V
DS
= 0.8 x Rated BV
DSS
(Figures 13, 16, 17) Gate Charge is Essentially
Independent of Operating Temperature
-
2.0
3.0
nC
Gate to Source Charge
Q
gs
-
1.0
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
1.0
-
nC
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1MHz
(Figure 10)
-
50
-
pF
Output Capacitance
C
OSS
-
20
-
pF
Reverse Transfer Capacitance
C
RSS
-
5
-
pF
IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3
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