參數(shù)資料
型號(hào): IRFD9220
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A)
中文描述: 功率MOSFET(減振鋼板基本\u003d-為200V,的Rds(on)\u003d 1.5ohm,身份證\u003d- 0.56A)
文件頁(yè)數(shù): 5/6頁(yè)
文件大小: 53K
代理商: IRFD9220
4-55
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
4
3
2
1
00
-1
-2
-3
-4
-5
I
D
, DRAIN CURRENT (A)
g
f
,
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
V
DS
I
D(ON)
x r
DS(ON)MAX
-0.4
-1.0
-1.2
-1.6
-1.8
-0.6
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
-0.8
-1.4
-0.1
-1.0
-10
I
S
,
-100
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
0
-5
-10
0
4
8
12
16
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
V
G
,
I
D
= -3.6A
20
-15
-20
V
DS
= -40V
V
DS
= -100V
V
DS
= -160V
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
IRFD9220
相關(guān)PDF資料
PDF描述
IRFE120 HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
irfe430 HEXFET TRANSISTOR
IRFE430 HEXFET Transistor(HEXFET 晶體管)
IRFF110 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET(3.5A, 100V, 0.600 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
IRFF120 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET(6.0A, 100V , 0.300 Ohm, N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFD9220PBF 功能描述:MOSFET P-Chan 200V 0.56 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFD9223 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 450MA I(D) | TO-250VAR
IRFDC20 功能描述:MOSFET N-Chan 600V 0.32 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFDC20PBF 功能描述:MOSFET N-Chan 600V 0.32 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFE024 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:N-CHANNEL POWER MOSFET