參數(shù)資料
型號: IRFF210
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
中文描述: 2.2 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 5/7頁
文件大小: 325K
代理商: IRFF210
5
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
(Continued)
1.25
1.05
0.85
0
160
-40
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.15
0.95
0.75
40
80
120
B
I
D
= 250
μ
A
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
500
400
300
200
100
0
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
C
ISS
C
OSS
C
RSS
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
1
2
3
4
0
5
4.0
3.2
2.4
0
1.6
g
f
,
80
μ
s PULSE TEST
0.8
T
J
= 125
o
C
T
J
= 25
o
C
3.6
2.8
2.0
1.2
0.4
T
J
= -55
o
C
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
1
0.1
0
1
2
3
4
5
T
J
= 150
o
C
T
J
= 25
o
C
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
2
4
6
8
0
10
20
15
0
10
V
G
,
V
DS
= 40V
V
DS
= 100V
5
I
D
= 2.2A
V
DS
= 160V
IRFF210
相關(guān)PDF資料
PDF描述
IRFF210 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
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