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參數(shù)資料
| 型號(hào)： | T7234 |
| 英文描述： | Compliance with the New ETSI PSD Requirement |
| 中文描述： | 符合新的ETSI PSD的要求 |
| 文件頁(yè)數(shù)： | 77/116頁(yè) |
| 文件大小： | 1056K |
| 代理商： | T7234 |
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Data Sheet
January 1998
T7256 Single-Chip NT1 (SCNT1) Transceiver
Lucent Technologies Inc.
73
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent or latent damage to the device. These
are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in
excess of those given in the operation sections of the data sheet. Exposure to absolute maximum ratings for
extended periods can adversely affect device reliability.
External leads can be soldered safely at temperatures up to 300
°
C.
Handling Precautions
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid expo-
sure to electrostatic discharge (ESD) during handling and mounting. Lucent employs a human-body model (HBM)
and charged-device model (CDM) for ESD-susceptibility testing and protection design evaluation. ESD voltage
thresholds are dependent on the circuit parameters used to defined the model. No industry-wide standard has
been adopted for the CDM. However, a standard HBM (resistance = 1500
, capacitance = 100 pF) is widely used
and, therefore, can be used for comparison. The HBM ESD threshold presented here was obtained by using these
circuit parameters:
Recommended Operating Conditions
Parameter
Symbol
V
DD
P
D
T
stg
—
Min
–0.5
—
–55
–0.5
Max
6.5
800
150
6.5
Unit
V
mW
°
C
V
dc Supply Voltage Range
Power Dissipation (package limit)
Storage Temperature
Voltage (any pin) with Respect to GND
ESD Threshold Voltage
Device
T7256-ML2
T7256-1ML
Voltage
>1000
>1000
Parameter
Symbol
T
A
V
DD
V
GG
Test Conditions
V
DD
= 5 V
±
5%
—
—
Min
–40
4.75
–10
Typ
—
5.0
—
Max
85
5.25
10
Unit
°
C
V
mV
Ambient Temperature
Any V
DD
GND to GND
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