| 型號(hào) | 廠商 | 描述 |
| ag402-86g 2 3 4 5 |
TRIQUINT SEMICONDUCTOR INC | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| ag402-89g 2 3 4 5 |
TRIQUINT SEMICONDUCTOR INC | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| ag503-86g 2 3 4 5 |
0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER | |
| ag503-86g 2 3 4 5 |
TRIQUINT SEMICONDUCTOR INC | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| ag503-86 2 3 4 5 6 |
TRIQUINT SEMICONDUCTOR INC | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| ag503-86 2 3 4 5 6 |
0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER | |
| ag503-89g 2 3 4 5 |
0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER | |
| ag503-89g 2 3 4 5 |
TRIQUINT SEMICONDUCTOR INC | 0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| ag602-86 2 3 4 5 6 |
0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER | |
| agr09045xum 2 3 4 5 6 7 8 9 |
LSI CORP | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| agr09045xum 2 3 4 5 6 7 8 9 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | |
| agr09180ef 2 3 4 5 6 7 8 9 |
TRIQUINT SEMICONDUCTOR INC | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| agr18030ef 2 3 4 5 6 7 8 9 |
TRIQUINT SEMICONDUCTOR INC | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| agr19045ef 2 3 4 5 6 7 8 9 10 |
TRIQUINT SEMICONDUCTOR INC | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| agr19k180eu 2 3 |
2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET | |
| agr21060ef 2 3 4 5 |
TRIQUINT SEMICONDUCTOR INC | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| agr21060eu 2 3 4 5 |
TRIQUINT SEMICONDUCTOR INC | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| agr21180ef 2 3 4 5 6 7 8 9 10 |
TRIQUINT SEMICONDUCTOR INC | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| agr26045eu 2 3 4 5 6 7 8 9 10 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | |
| agt-8235r 2 3 |
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER | |
| agt-8235 2 3 |
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER | |
| agt-8235r 2 3 |
AGILENT TECHNOLOGIES INC | 2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| agt-8235r 2 3 |
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER | |
| ah101 2 3 4 5 6 |
TRIQUINT SEMICONDUCTOR INC | 50 MHz - 1500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| ah101 2 3 4 5 6 |
50 MHz - 1500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER | |
| ah102a 2 3 4 5 |
TRIQUINT SEMICONDUCTOR INC | 350 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| ah110-89g 2 3 4 5 |
50 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER | |
| ah175-wla-b 2 3 4 5 6 7 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, -8-8mT, 300-400mV, RECTANGULAR, SURFACE MOUNT |
| ah175-wl-a 2 3 4 5 6 7 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, -6-6mT, 300-400mV, RECTANGULAR, SURFACE MOUNT |
| ah180-wg-a 2 3 4 5 6 7 8 9 10 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, -3--4mT, 0.10-0.30V, RECTANGULAR, SURFACE MOUNT |
| ah180-pg-7 2 3 4 5 6 7 8 9 10 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, -3--4mT, 0.10-0.30V, RECTANGULAR, THROUGH HOLE MOUNT |
| ah180-wl-b 2 3 4 5 6 7 8 9 10 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, -3--4mT, 0.10-0.30V, RECTANGULAR, SURFACE MOUNT |
| ah180-snl-b 2 3 4 5 6 7 8 9 10 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, -3--4mT, 0.10-0.30V, SQUARE, SURFACE MOUNT |
| ah182-pl 2 3 4 5 6 7 8 9 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, 1-6mT, 0.10-0.30V, RECTANGULAR, THROUGH HOLE MOUNT |
| ah182-wla 2 3 4 5 6 7 8 9 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, 1-6mT, 0.10-0.30V, RECTANGULAR, SURFACE MOUNT |
| ah182-pwa 2 3 4 5 6 7 8 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, 1-6mT, 0.10-0.30V, RECTANGULAR, SURFACE MOUNT |
| ah182-pw 2 3 4 5 6 7 8 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, 1-6mT, 0.10-0.30V, RECTANGULAR, SURFACE MOUNT |
| ah182-wl-b 2 3 4 5 6 7 8 9 10 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, 1-6mT, 0.10-0.30V, RECTANGULAR, SURFACE MOUNT |
| ah183-pwa 2 3 4 5 6 7 8 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, 1-6mT, 0.10-0.30V, RECTANGULAR, SURFACE MOUNT |
| ah183-pw 2 3 4 5 6 7 8 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, 1-6mT, 0.10-0.30V, RECTANGULAR, SURFACE MOUNT |
| ah202-f 2 3 4 5 6 7 |
TRIQUINT SEMICONDUCTOR INC | 30 MHz - 2200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| ah266k-pg-b-b 2 3 4 5 6 7 8 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT |
| ah277az4-ag1 2 3 4 5 6 7 8 9 10 |
BCD SEMICONDUCTOR MANUFACTURING LTD | MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT |
| ah312-s8g 2 3 4 5 6 7 |
TRIQUINT SEMICONDUCTOR INC | 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| ah337-pl 2 3 4 5 6 |
INTEGRATED CIRCUIT TECHNOLOGY CORP | MAGNETIC FIELD SENSOR-HALL EFFECT |
| ah373-wla 2 3 4 5 6 7 8 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, -6-6mT, 0.30-0.40V, RECTANGULAR, SURFACE MOUNT |
| ah373-wl-a 2 3 4 5 6 7 8 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, -6-6mT, 0.30-0.40V, RECTANGULAR, SURFACE MOUNT |
| ah373-wg-a 2 3 4 5 6 7 8 |
DIODES INC | MAGNETIC FIELD SENSOR-HALL EFFECT, -6-6mT, 0.30-0.40V, RECTANGULAR, SURFACE MOUNT |
| ah477az4-ag1 2 3 4 5 6 7 8 9 10 |
BCD SEMICONDUCTOR MANUFACTURING LTD | MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT |
| ah477z4-ag1 2 3 4 5 6 7 8 9 10 |
BCD SEMICONDUCTOR MANUFACTURING LTD | MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT |