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參數(shù)資料
| 型號： | AH110-89G |
| 元件分類： | 放大器 |
| 英文描述： | 50 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | GREEN, TO-243C, SOT-89, SMT, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 215K |
| 代理商： | AH110-89G |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 5 January 2008
AH110
0.2 Watt, High Linearity InGaP HBT Amplifier
Product Features
50 – 2000 MHz
+23 dBm P1dB
+39 dBm Output IP3
20.5 dB Gain @ 900 MHz
17.6 dB Gain @ 1900 MHz
Single Positive Supply (+8V)
Lead-free/Green/RoHS-
compliant SOT-89 Package
Applications
Mobile Infrastructure
Defense/Homeland Security
Product Description
The AH110 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve performance over a broad range with +39
dBm OIP3 and +23 dBm of compressed 1-dB power. It is
housed in a lead-free/green/RoHS-compliant SOT-89 SMT
package.
All devices are 100% RF and DC tested.
The product is targeted for use as a gain block/driver
amplifier for various current and next generation wireless
technologies such as GPRS, GSM and CDMA, where high
linearity and medium power is required. In addition, the
AH110 will work for numerous other applications within
50 to 2000 MHz frequency range.
Functional Diagram
RF IN
GND
RF OUT
GND
1
23
4
Function
Pin No.
Input / Base
1
Output / Collector
3
Ground
2, 4
Specifications
(1)
Parameters
Units
Min
Typ
Max
Operational Bandwidth
MHz
50
2000
Test Frequency
MHz
900
Gain
dB
20.5
Output P1dB
dBm
+23
Output OIP3
dBm
+39
Test Frequency
MHz
1900
Gain
dB
17
17.6
Output P1dB
dBm
+23
Output IP3
(2)
dBm
+38
+40
IS-95A Channel Power
@ -45 dBc ACPR, 1900 MHz
dBm
+16
Noise Figure
dB
5.2
Operating Current Range
(3)
mA
85
100
135
Device Voltage
(4)
V
5
1. Test conditions unless otherwise noted: 25
°C, Vsupply = +8V, in tuned application circuit with
Rbias = 30
Ω.
2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. OIP3 is
tested using a tuned fixture for optimal OIP3. Specifically, the 1.5pF output shunt capacitor is
placed at 44 away from pin 3. The application circuit is tuned for optimum ACPR performance.
OIP3 performance shown elsewhere in this datasheet corresponds to the 1.5pF capacitor placed at
39 away from pin 3. The recommended configuration will yield 2 dB lower OIP3, but will have
improved S22 and gain flatness performance.
3. This corresponds to the quiescent current or operating current under small-signal conditions.
4. This device requires a minimum 7 V power supply through a dropping resistor. 8 V and 30 ohms
are recommended for proper operation. Operation of the device directly to a 5 V supply could lead
to thermal damage to the device.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
-55 to +150
°C
RF Input Power (continuous)
+15 dBm
Device Voltage
+6 V
Device Current
150 mA
Junction Temperature
+200
°C
Thermal Resistance, Rth
128
°C / W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(5)
Parameters
Units
Typical
Frequency
MHz
900
1900
S21 – Gain
dB
20.5
17.6
S11 – Input R.L.
dB
-20
-17
S22 – Output R.L.
dB
-9.5
-7.4
Output P1dB
Output IP3
(6)
dBm
+22.8
+39
+23
+38
IS-95A Channel Power
(7)
dBm
+17
+16
Noise Figure
dB
5
5.2
Supply Bias
+8 V @ 100 mA
5. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +8 V, Icc =
100 mA, +25
°C, Rbias = 30 Ω.
6. The recommended configuration with the 1.5pF output shunt capacitor placed at 39 away from pin
3 will yield 2 dB lower OIP3 than the maximum achievable OIP3, but will have improved S22 and
gain flatness performance. Refer to note 2 for more information.
7. This is measured with an IS-95 signal at (9 ch. Fwd) at -45dBc ACPR.
Ordering Information
Part No.
Description
AH110-89G
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 package)
AH110-89PCB900
900 MHz Evaluation Board
AH110-89PCB1900
1900 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
相關(guān)PDF資料 |
PDF描述 |
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| AH175-WLA-B | MAGNETIC FIELD SENSOR-HALL EFFECT, -8-8mT, 300-400mV, RECTANGULAR, SURFACE MOUNT |
| AH175-WL-A | MAGNETIC FIELD SENSOR-HALL EFFECT, -6-6mT, 300-400mV, RECTANGULAR, SURFACE MOUNT |
| AH180-WG-A | MAGNETIC FIELD SENSOR-HALL EFFECT, -3--4mT, 0.10-0.30V, RECTANGULAR, SURFACE MOUNT |
| AH180-PG-7 | MAGNETIC FIELD SENSOR-HALL EFFECT, -3--4mT, 0.10-0.30V, RECTANGULAR, THROUGH HOLE MOUNT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AH110-89PCB1900 | 功能描述:射頻開發(fā)工具 1900MHz Eval Brd 17.5dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AH110-89PCB900 | 功能描述:射頻開發(fā)工具 900MHz Eval Brd 20.5dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AH110-RFID | 制造商:WJCI 制造商全稱:WJCI 功能描述:0.2 Watt, High Linearity InGaP HBT Amplifier |
| AH11-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| AH11109 | 制造商:Panasonic Electric Works 功能描述: |
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