- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄57790 > AGR19045EF (TRIQUINT SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | AGR19045EF |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 332K |
| 代理商： | AGR19045EF |
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
AGR19045EF
Electrical Characteristics
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings
*
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 3. dc Characteristics
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
1.5
°C/W
Parameter
Symbol
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Total Dissipation at TC = 25 °C
PD
115
W
Derate Above 25 °C
—
0.67
W/°C
Operating Junction Temperature
TJ
200
°C
Storage Temperature Range
TSTG
–65, 150
°C
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0 V, ID = 38 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
1.3
Adc
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
IDSS
—
4
Adc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 0.4 A)
GFS
—
3.0
—
S
Gate Threshold Voltage (VDS = 10 V, ID = 130 A)
VGS(TH)
—
4.8
Vdc
Gate Quiescent Voltage (VDS = 28 V, ID = 400 mA)
VGS(Q)
—
3.7
—
Vdc
Drain-source On-voltage (VGS = 10 V, ID = 0.4 A)
VDS(ON)
—
0.3
—
Vdc
75
= 200A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AGR19K180EU | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21060EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21060EU | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21180EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26045EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19060E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。