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參數(shù)資料
| 型號： | AGR19045EF |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 332K |
| 代理商： | AGR19045EF |
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
AGR19045EF
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR19045EF
Label Notes:
M before the part number denotes model program. X before the part number denotes engineering prototype.
The last two letters of the part number denote wafer technology and package type.
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = five-digit wafer lot number.
ZZZZZZZ = seven-digit assembly lot number on production parts.
ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
AGR21045F
YYWWLL
ZZZZZZZ
1
2
3
1
3
2
PINS:
1. DRAIN
2. GATE
3. SOURCE
PEAK DEVICES
AGR19045XF
YYWWLL XXXXX
ZZZZZZZ
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PDF描述 |
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| AGR19K180EU | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21060EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21060EU | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21180EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26045EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19060E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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