參數(shù)資料
型號(hào)： AH202-F
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類： 放大器
英文描述： 30 MHz - 2200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝： 6 X 6 MM, ROHS COMPLIANT, PLASTIC, MO-220VJJC, SMT, QFN-28
文件頁(yè)數(shù)： 5/7頁(yè)
文件大?。?/td> 384K
代理商： AH202-F
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 5 of 7 August 2009
AH202
1W High Linearity Amplifier
Application Circuit: 1900 MHz (AH202-PCB1900)
Typical RF Performance at 25 C
Frequency
1900 MHz
S21 - Gain
15 dB
S11
- 17 dB
S22
- 10 dB
Output P1dB
+ 29.7 dBm
Output IP3
+ 46 dBm
IS-95A Ch. Power
@ -45 dBc ACPR
+ 23 dBm
Noise Figure
3.8 dB
Supply Voltage
+11 V
Supply Current
330 mA
Notes:
1.
The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required.
2.
Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying
capacity. Coilcraft’s 1008 CS series (part # 1008CS-220X_B) is recommended.
3.
C8 is located at silk screen marker “7” on the WJ evaluation board.
S-Parameters
Vd = +11.0V, Temp = +25C
6
7
8
9
10
11
12
13
14
15
16
1700
1800
1900
2000
2100
2200
Frequency (MHz)
S
2
1
(dB
)
-25
-20
-15
-10
-5
0
S
1
&
S
2
(dB
)
S21
S11
S22
Noise Figure
Vd = +11.0 V, Temp = +25°C
0
1
2
3
4
5
6
1700
1800
1900
2000
Frequency (MHz)
N
o
is
e
Fi
gu
re
(d
B
)
OIP3 vs. Pout
Vd = +11.0 V, Temp = +25°C
35
40
45
50
55
5
7
9
11
13
15
17
Pout (dBm)
O
IP
3
(dBm
)
ACPR vs. Channel Power
1900 MHz., IS-95 Ch. Fwd, ± 885 KHz offset, 30 KHz Meas. BW
-75
-70
-65
-60
-55
-50
-45
-40
14
16
18
20
22
24
Output Channel Power (dBm)
A
C
P
R
(d
B
c
)
CAP
ID=C2
C=56 pF
CAP
ID=C3
C=56 pF
CAP
ID=L2
C=2.4 pF
CAP
ID=C7
C=1.0 pF
CAP
ID=C4 (0805)
C=1000 pF
CAP
ID=C5 (1206)
C=1e5 pF
IND
ID=L1 (1008)
L=22 nH
TLIN
ID=TL1
Z0=50 Ohm
EL=31 Deg
F0=1900 MHz
SUBCKT
ID=S1
NET="AH202_F"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
+ 11V
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