參數(shù)資料
型號: AH202-F
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 放大器
英文描述: 30 MHz - 2200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 6 X 6 MM, ROHS COMPLIANT, PLASTIC, MO-220VJJC, SMT, QFN-28
文件頁數(shù): 1/7頁
文件大小: 384K
代理商: AH202-F
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 1 of 7 August 2009
AH202
1W High Linearity Amplifier
Product Features
30 – 2200 MHz
17 dB Gain @ 900 MHz
+30 dBm P1dB
+47 dBm Output IP3
Single Positive Supply
Internally Matched
Lead-free/RoHS-compliant
6x6mm QFN SMT package
Applications
Mobile Infrastructure
CATV / DBS
Optimal for VHF / UHF
broadband applications
Defense / Homeland Security
Product Description
The AH202 is a 1-Watt driver amplifier that offers
excellent dynamic range in a low-cost, lead-free/RoHS-
compliant 6x6 mm 28-pin QFN surface-mount package.
This device provides its optimum P1dB and OIP3
performance when biased at + 11 V; It can also be biased
as low as +9 V for lower power applications.
The backside metalization provides excellent thermal
dissipation while allowing visible evidence of solder reflow
across the bottom of the package on a SMT board.
Superior thermal design allows the product an MTTF of
over 100 years at a mounting temperature of +85 C. All
devices are 100% RF & DC tested.
The product is targeted for use as a driver amplifier for
wireless infrastructure or CATV applications where high
linearity and medium power is required.
Functional Diagram
Function
Pin No.
Input
3
No Connect
7
Output/Bias
19
No Connect or
Ground
All other pins
Ground
Backside
Paddle
Specifications
(1)
Parameters
Units
Min
Typ
Max
Operational Bandwidth
MHz
30
2200
Test Frequency
MHz
800
Gain
dB
14
17
Input Return Loss
dB
20
Output Return Loss
dB
18
Output P1dB
dBm
+29
+30
Output IP3
(2)
dBm
+45
+47
Noise Figure
dB
2.5
IS-95 Channel Power
(3)
@ -45dBc ACPR
dBm
+24
Operating Current Range
mA
330
390
Supply Voltage
V
+11
1. Test conditions unless otherwise noted: 25C, Vdd = 11 V in a 50-Ω unmatched fixture.
2. 3OIP measured with two tones at an output power of +10 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability, ±885 kHz offset, 30
kHz bandwidth, Channel BW = 1.23 MHz.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
-55 to +125 C
DC Voltage
+13 V
RF Input Power (continuous)
+16 dBm
Thermal Resistance, Rth
18 C/W
Maximum Junction Temperature
+160 C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(4)
Parameters
Units
Typical
Frequency
MHz
900
1900
2140
Gain
dB
17
15
Input Return Loss
dB
20
17
8
Output Return Loss
dB
18
10
13
Output P1dB
dBm
+30
+29.7
+29.4
Output IP3
dBm
+47
+46
+45.5
Noise Figure
dB
2.8
3.8
4.8
IS-95 Channel Power
(3)
@ -45dBc ACPR
dBm
+24
+23
-
WCDMA Channel Power
(5)
@ -45dBc ACLR
dBm
-
+20.5
Supply Bias
+11 V @ 330 mA
4. Data reflects performance of a typical AH202 in an application circuit including associated circuit
board and passive component losses.
5. 3GPP W-CDMA, Test Model 1, +32 DPCH, Pk/Avg Ratio = 8.5 dB at a 0.01% probability, ±5
MHz offset, Integrated Channel BW = 3.84 MHz.
Ordering Information
Part No.
Description
AH202-F
1W High Linearity Amplifier
(lead-free/RoHS-compliant 6x6mm QFN package)
AH202-PCB900
900 MHz Evaluation Board
AH202-PCB1900
1900 MHz Evaluation Board
AH202-PCB2140
2140 MHz Evaluation Board
Standard tape / reel size = 500 pieces on a 7” reel
1
2
3
4
5
6
7
21
20
19
18
17
16
15
28
27
26
25
24
23
22
8
9
10
11
12
13
14
RF OUT
RF IN
N/C
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