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參數(shù)資料
| 型號(hào)： | AGR19K180EU |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-4 |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大?。?/td> | 391K |
| 代理商： | AGR19K180EU |
Copyright 2003 Agere Systems Inc.
All Rights Reserved
September 2003
PB03-199RFPP
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For additional information, contact your Agere Systems Account Manager or the following:
INTERNET:
http://www.agere.com
E-MAIL:
docmaster@agere.com
N. AMERICA:
Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138
1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106)
ASIA:
Agere Systems Hong Kong Ltd., Suites 3201 & 3210-12, 32/F, Tower 2, The Gateway, Harbour City, Kowloon
Tel. (852) 3129-2000, FAX (852) 3129-2020
CHINA: (86) 21-5047-1212 (Shanghai), (86) 755-25881122 (Shenzhen)
JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei)
EUROPE:
Tel. (44) 1344 296 400
180 W, 1.840 GHz—1.870 MHz, N-Channel E-Mode, Lateral MOSFET
September 2003
AGR19K180E
Preliminary Product Brief
Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application.
Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc.
Ordering Information
Device Code
Package
Availability
Comcode
AGR19K180E
AGR19K180EU (surface-mount)
Tape and Reel
—
AGR19K180EF (flanged)
Tray
—
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR21030EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21060E | 制造商:TRIQUINT 制造商全稱(chēng):TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21060EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21060EU | 制造商:TRIQUINT 制造商全稱(chēng):TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
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