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參數(shù)資料
| 型號： | AGR21060EF |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 320K |
| 代理商： | AGR21060EF |
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60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR21060E
A. Schematic
Parts List:
?
Microstrip Line: Z1 0.361 in. x 0.065 in.; Z2 0.207 in. x 0.150 in.; Z3 0.085 in. x 0.087 in.; Z4 0.130 in. x 0.357 in.; Z5 0.436 in. x 0.087 in.;
Z6 0.414 in. x 0.900 in.; Z7 0.424 in. x 0.050 in.; Z8 1.170 in. x 0.050 in.; Z9 0.520 in. x 0.624 in.; Z10 0.120 in. x 0.147 in.;
Z11 0.180 in. x 0.250 in.; Z12 0.469 in. x 1.200 in.; Z13 0.068 in. x 0.068 in.; Z14 0.278 in. x 0.065 in.; Z15 1.170 in. x 0.050 in
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ATC
chip capacitor: C1, C2: 15 pF 100B150JCA500X; C6, C7: 8.2 pF 100B8R2JCA500X; C11: 1.2 pF 100B1R2JCA500X;
C14, C15: 5.6 pF 100B5R6JCA500X.
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Sprague
tantalum surface-mount chip capacitor: C3, C4, C12, C13: 22 F, 35 V, T491D226K035AS.
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Vitramon
chip capacitor: C5, C9: 22000 pF.
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0805 size chip capacitor: C8 0.01 F.
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1206 size chip capacitor: C10 0.1 F.
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1206 size 0.25 W chip resistors: R1 1 kΩ; R2 560 kΩ; R3 4.7 Ω.
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Fair-Rite
ferrite bead: FB1 2743019447.
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Taconic
ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
εr = 3.5.
B. Component Layout
Figure 2. AGR21060E Test Circuit
DUT
R3
C3
R2
R1
+
C4
C5
+
C6
FB1
Z7
Z1 C1 Z2
Z3
Z4
Z5
Z9
Z10
Z11
Z14
C10A
A
7
C
A
8
C
A
9
C
Z8
A
2
1
C
A
3
1
C
+
C11A
C14A
RF INPUT
VGG
VDD1
RF
C2
C15A
OUTPUT
+
1
2
3
PINS:
1. DRAIN
2. GATE
3. SOURCE
C10B
B
7
C
B
8
C
B
9
C
C13B
C12B
+
C11B
C14B
VDD2
C15B
+
Z15
Z6
Z12
Z13
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR21060EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21090E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21090EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21090EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
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