參數(shù)資料
型號: 28F640C3
廠商: Intel Corp.
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導塊閃速存儲器)
中文描述: 3伏高級啟動塊閃存(3伏高級快速引導塊閃速存儲器)
文件頁數(shù): 5/70頁
文件大?。?/td> 894K
代理商: 28F640C3
28F800C3, 28F160C3, 28F320C3, 28F640C3
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Revision History
Date of
Revision
Version
Description
05/12/98
-001
Original version
07/21/98
-002
48-Lead TSOP package diagram change
μ
BGA package diagrams change
32-Mbit ordering information change (Section 6)
CFI Query Structure Output Table Change (Table C2)
CFI Primary-Vendor Specific Extended Query Table Change for Optional
Features and Command Support change (Table C8)
Protection Register Address Change
I
PPD
test conditions clarification (Section 4.3)
μ
BGA package top side mark information clarification (Section 6)
10/03/98
-003
Byte-Wide Protection Register Address change
V
IH
Specification change (Section 4.3)
V
IL
Maximum Specification change (Section 4.3)
I
test conditions clarification (Section 4.3)
Added Command Sequence Error Note (Table 7)
Datasheet renamed from 3 Volt Advanced Boot Block, 8-, 16-, 32-Mbit Flash
Memory Family.
12/04/98
-004
Added t
/t
and t
(Section 4.6)
Programming the Protection Register clarification (Section 3.4.2)
12/31/98
-005
Removed all references to x8 configurations
02/24/99
-006
Removed reference to 40-Lead TSOP from front page
06/10/99
-007
Added Easy BGA package (Section 1.2)
Removed 1.8 V I/O references
Locking Operations Flowchart changed (Appendix B)
Added t
(Section 4.6)
CFI Primary Vendor-Specific Extended Query changed (Appendix C)
03/20/00
-008
Max I
CCD
changed to 25 μA
Table 10, added note indicating V
CC
Max = 3.3 V for 32-Mbit device
Added specifications for 0.18 micron product offerings throughout document
Added 64-Mbit density
04/24/00
-009
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