參數(shù)資料
型號(hào): 28F640C3
廠(chǎng)商: Intel Corp.
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 3伏高級(jí)啟動(dòng)塊閃存(3伏高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
文件頁(yè)數(shù): 4/70頁(yè)
文件大?。?/td> 894K
代理商: 28F640C3
28F800C3, 28F160C3, 28F320C3, 28F640C3
iv
3UHOLPLQDU\
4.0
Electrical Specifications
........................................................................................23
4.1
Absolute Maximum Ratings ................................................................................23
4.2
Operating Conditions ..........................................................................................24
4.3
Capacitance ........................................................................................................24
4.4
DC Characteristics..............................................................................................25
4.5
AC Characteristics—Read Operations—Extended Temperature .......................28
4.6
AC Characteristics—Write Operations................................................................33
4.7
Erase and Program Timings ...............................................................................37
4.8
Reset Operations................................................................................................39
Ordering Information
..............................................................................................40
Additional Information
...........................................................................................41
5.0
6.0
Appendix A
Appendix B
Appendix C
Appendix D
Appendix E
Appendix F
Appendix G
WSM Current/Next States
................................................................................42
Program/Erase Flowcharts
.............................................................................44
Common Flash Interface Query Structure
...............................................50
Architecture Block Diagram
...........................................................................57
Word-Wide Memory Map Diagrams
.............................................................58
Device ID Table
....................................................................................................62
Protection Register Addressing
...................................................................63
相關(guān)PDF資料
PDF描述
28F640J3C-120 Intel StrataFlash Memory (J3)
28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM(低壓,64K位, CMOS 并行EEPROM)
28M0U 60V 300mA MONOLITHIC DIODE ARRAY
28M0DC 60V 300mA MONOLITHIC DIODE ARRAY
28M0DS 60V 300mA MONOLITHIC DIODE ARRAY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F640C3BC80 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3C120 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3C-120 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3D75 制造商:Intel 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J5 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory