參數(shù)資料
型號: 28F640C3
廠商: Intel Corp.
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器)
中文描述: 3伏高級啟動塊閃存(3伏高級快速引導(dǎo)塊閃速存儲器)
文件頁數(shù): 45/70頁
文件大?。?/td> 894K
代理商: 28F640C3
28F800C3, 28F160C3, 28F320C3, 28F640C3
3UHOLPLQDU\
39
4.8
Reset Operations
NOTES:
1. If t
is < 100 ns the device may still reset but this is not guaranteed.
2. If RP# is asserted while a block erase or
word program operation is not executing, the reset will complete
within 100 ns.
3. Sampled, but not 100% tested.
See
Section 3.1.4
for a full description of these conditions.
Figure 10. AC Waveform: Reset Operations
IH
V
IL
V
RP# (P)
PLPH
t
IH
V
IL
V
RP# (P)
PLPH
t
(A) Reset during Read Mode
Abort
Complete
PLRH
PHQV
PHWL
PHEL
t
t
t
PHQV
PHWL
PHEL
t
t
t
(B) Reset during Program or Block Erase, <
PLPH
PLRH
t
t
IH
V
IL
V
RP# (P)
PLPH
t
Abort
Complete
PHQV
PHWL
PHEL
t
t
t
PLRH
t
Deep
Power-
Down
(C) Reset Program or Block Erase, >
PLPH
PLRH
t
Table 11. Reset Specifications
Symbol
Parameter
Notes
V
CC
2.7 V – 3.6 V
Unit
Min
Max
t
PLPH
RP# Low to Reset during Read
(If RP# is tied to V
CC
, this specification is not
applicable)
2,4
100
ns
t
PLRH1
RP# Low to Reset during Block Erase
3,4
22
μs
t
PLRH2
RP# Low to Reset during Program
3,4
12
μs
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