參數(shù)資料
型號: W972GG8JB-25
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 256M X 8 DDR DRAM, 0.4 ns, PBGA60
封裝: 11 X 11.50 MM, ROHS COMPLIANT, WBGA-60
文件頁數(shù): 76/86頁
文件大?。?/td> 1466K
代理商: W972GG8JB-25
W972GG8JB
Publication Release Date: Feb. 18, 2011
- 78 -
Revision A02
10.20 Burst read operation followed by precharge: RL=4 (AL=0, CL=4, BL=8, tRTP
> 2clks)
Dout
A0
Dout
A1
Dout
A2
Dout
A3
NOP
Precharge
NOP
Post CAS
READ A
Bank A
Activate
T0
T1
T2
T3
T4
T5
T6
T7
CLK/CLK
CMD
DQS,
DQS
DQ's
T8
Dout
A5
Dout
A6
Dout
A7
Dout
A4
CL = 4
RL = 4
≥ tRAS
≥ tRTP
AL + BL/2 + max(RTP, 2) - 2 clks
≥ tRP
first 4-bit prefetch
second 4-bit prefetch
AL = 0
10.21 Burst write operation followed by precharge: WL = (RL-1) = 3
NOP
Post CAS
WRITE A
Precharge
T0
T1
T2
T3
T4
T5
T6
T7
CLK/CLK
CMD
DQS,
DQS
DQ's
T8
WL = 3
Completion of the Burst Write
DIN
A0
DIN
A1
DIN
A2
DIN
A3
≥ tWR
相關(guān)PDF資料
PDF描述
WF512K32-150CJC 512K X 32 FLASH 5V PROM MODULE, 150 ns, CQCC68
W73B586A-09L 32K X 18 CACHE SRAM, 9 ns, PQCC52
WS512K32-100G4TM 2M X 8 MULTI DEVICE SRAM MODULE, 100 ns, CQFP68
WS512K32-35G4M 2M X 8 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68
WS512K32-35G4Q 2M X 8 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W972GG8JB-25I 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 2.5NS 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 2.5NS 80WBGA
W972GG8JB-3 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 2G-Bit 256Mx8 1.8V 60-Pin WBGA 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 3NS
W9751G6IB-25 功能描述:IC DDR2-800 SDRAM 512MB 84-WBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.173",4.40mm 寬) 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR)
W9751G6JB 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 4 BANKS ? 16 BIT DDR2 SDRAM
W9751G6JB-25 制造商:Winbond Electronics Corp 功能描述:512GB DDRII