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參數(shù)資料
| 型號： | MT49H16M18C |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 288Mb SIO REDUCED LATENCY(RLDRAM II) |
| 中文描述： | 288Mb二氧化硅約化延遲（延遲DRAM二） |
| 文件頁數(shù)： | 43/44頁 |
| 文件大?。?/td> | 1117K |
| 代理商： | MT49H16M18C |
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16 MEG x 18, 32 MEG x 9
2.5V V
EXT
, 1.8V V
DD
, HSTL, SIO, RLDRAM II
pdf: 09005aef80a41b59/zip: 09005aef811ba111
MT49H8M18C_2.fm - Rev. F 11/04 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
43
Table 22:
+0°C
≤
Tc
≤
+95°C; +1.7V
≤
V
DD
≤
+1.9V, unless otherwise note.
I
DD
Operating Conditions and Maximum Limits
DESCRIPTION
CONDITIONS
SYMBOL
MAX
UNIT
mA
-25
48
26
288
26
-33
48
26
288
26
-5
48
26
288
26
Standby
Current
t
CK = Idle
All banks idle, no inputs toggling
t
CK = MIN, CS# = 1
No commands, address/data change up
to once every four clock cycles
BL = 2,
t
CK = MIN,
t
RC = MIN,
1 bank active, half address changes
once per
t
RC, read followed by write
sequence
BL = 4,
t
CK = MIN,
t
RC = MIN,
1 bank active, half address changes
once per
t
RC, read followed by write
sequence
BL = 8,
t
CK = MIN,
t
RC = MIN,
1 bank active, half address changes
once per
t
RC, read followed by write
sequence
t
CK = MIN,
t
RC = MIN
Cyclic bank refresh, data inputs are
switching
t
CK = MIN,
t
RC = MIN
Single bank refresh, half address/data
toggle
BL = 2,
t
CK = MIN,
t
RC = MIN, cyclic bank
access, half of address bits change every
clock cycle, continuous data
BL = 4,
t
CK = MIN,
t
RC = MIN, cyclic bank
access, half of address bits change every
two clock cycles, continuous data
BL = 8,
t
CK = MIN,
t
RC = MIN, cyclic bank
access, half of address bits change every
four clock cycles, continuous data
I
SB
1 (V
DD
)
I
SB
1 (V
EXT
)
I
SB
2 (V
DD
)
I
SB
2 (V
EXT
)
Active Standby
Current
mA
Incremental
Current
I
DD
1 (V
DD
)
I
DD
1 (V
EXT
)
348
41
305
36
255
36
mA
Incremental
Current
I
DD
2 (V
DD
)
I
DD
2 (V
EXT
)
352
48
319
42
269
42
mA
Incremental
Current
I
DD
3 (V
DD
)
I
DD
3 (V
EXT
)
408
55
368
48
286
48
mA
Burst
Refresh Current
I
REF
1 (V
DD
)
I
REF
1 (V
EXT
)
680
133
530
111
367
105
mA
Distributed
Refresh Current
I
REF
2 (V
DD
)
I
REF
2 (V
EXT
)
325
48
267
42
221
42
mA
Operating Supply
Current Example
I
DD
2
W
(V
DD
)
I
DD
2
W
(V
EXT
)
970
100
819
90
597
69
mA
Operating Supply
Current Example
I
DD
4
W
(V
DD
)
I
DD
4
W
(V
EXT
)
779
65
609
55
439
44
mA
Operating Supply
Current Example
I
DD
8
W
(V
DD
)
I
DD
8
W
(V
EXT
)
668
60
525
51
364
40
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT49H16M18CBM-25 | 制造商:Micron Technology Inc 功能描述: |
| MT49H16M18CBM-25 TR | 制造商:Micron Technology Inc 功能描述:16MX18 RLDRAM PLASTIC PBF FBGA 1.8V SEPARATE I/O 8 BANKS - Tape and Reel |
| MT49H16M18CBM-33 IT | 制造商:Micron Technology Inc 功能描述: |
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