參數(shù)資料
型號: MT49H16M18C
廠商: Micron Technology, Inc.
英文描述: 288Mb SIO REDUCED LATENCY(RLDRAM II)
中文描述: 288Mb二氧化硅約化延遲(延遲DRAM二)
文件頁數(shù): 29/44頁
文件大?。?/td> 1117K
代理商: MT49H16M18C
16 MEG x 18, 32 MEG x 9
2.5V V
EXT
, 1.8V V
DD
, HSTL, SIO, RLDRAM II
pdf: 09005aef80a41b59/zip: 09005aef811ba111
MT49H8M18C_2.fm - Rev. F 11/04 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
29
Figure 30: READ NOP READ with ODT: BL = 2, Configuration 1
Figure 31: READ NOP NOP READ with ODT: BL = 2, Configuration 1
NOTE:
A/BA
x
: address A of bank
x
RD: READ
Q
xy
:Data
y
to bank
x
RL: READ latency
CK#
CK
CMD
0
1
2
3
4
5
6
7
8
ADDR
RL = 4
Q
QKx
QKx#
Q0a Q0b
Q2a Q2b
RD
BA
BA
NOP
RD
NOP
NOP
NOP
NOP
NOP
NOP
DON’T CARE
UNDEFINED
ODT
ODT ON
QVLD
ODT ON
ODT OFF
ODT OFF
ODT ON
CK#
CK
CMD
0
1
2
3
4
5
6
7
8
ADDR
RL = 4
Q
QKx
QKx#
Q0a Q0b
Q2a Q2b
RD
BA
BA
NOP
NOP
RD
NOP
NOP
NOP
NOP
NOP
DON’T CARE
UNDEFINED
ODT
ODT ON
QVLD
ODT ON
ODT OFF
ODT OFF
ODT ON
9
相關(guān)PDF資料
PDF描述
MT49H16M18CFM-xx 288Mb SIO REDUCED LATENCY(RLDRAM II)
MT49H32M9C 288Mb SIO REDUCED LATENCY(RLDRAM II)
MT49H32M9CFM-xx 288Mb SIO REDUCED LATENCY(RLDRAM II)
MT4C1004J 4 Meg x 1 FPM DRAM(4 M x 1快速頁面模式動態(tài)RAM)
MT4C4001STG-6 standard or self refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT49H16M18CBM-25 制造商:Micron Technology Inc 功能描述:
MT49H16M18CBM-25 TR 制造商:Micron Technology Inc 功能描述:16MX18 RLDRAM PLASTIC PBF FBGA 1.8V SEPARATE I/O 8 BANKS - Tape and Reel
MT49H16M18CBM-33 IT 制造商:Micron Technology Inc 功能描述: