參數(shù)資料
型號(hào): UPD703130GC-8EU
廠(chǎng)商: NEC Corp.
英文描述: MOS INTEGRATED CIRCUIT
中文描述: 馬鞍山集成電路
文件頁(yè)數(shù): 40/72頁(yè)
文件大?。?/td> 601K
代理商: UPD703130GC-8EU
Preliminary Data Sheet U15390EJ1V0DS
40
μ
PD703130
(b) Read timing (high-speed page DRAM access: on-page) (1/2)
Parameter
Symbol
Condition
MIN.
MAX.
Unit
Data input setup time (to CLKOUT
)
<26>
t
SKID
18
ns
Data input hold time (from CLKOUT
)
<27>
t
HKID
2
ns
Delay time from OE
to data output
<37>
t
DRDOD
(0.5 + i)T – 10
ns
Column address setup time
<58>
t
ASC
(0.5 + w
CP
)T – 10
ns
Column address hold time
<59>
t
CAH
(1.5 + w
DA
)T – 10
ns
RAS hold time
<63>
t
RSH
(1.5 + w
DA
)T – 10
ns
Column address read time for RAS
<64>
t
RAL
(2 + w
CP
+ w
DA
)T – 10
ns
CAS pulse width
<65>
t
CAS
(1 + w
DA
)T – 10
ns
WE setup time (to CAS
)
<68>
t
RCS
(1 + w
CP
)T – 10
ns
WE hold time (from RAS
)
<69>
t
RRH
0.5T – 10
ns
WE hold time (from CAS
)
<70>
t
RCH
T – 10
ns
Output enable access time
<72>
t
OEA
(1 + w
CP
+ w
DA
)T – 28
ns
Access time from column address
<74>
t
AA
(1.5 + w
CP
+ w
DA
)
T –
28
ns
CAS access time
<75>
t
CAC
(1 + w
DA
)T – 28
ns
Output buffer turn-off delay time (from
OE
)
<78>
t
OEZ
0
ns
Output buffer turn-off delay time (from
CAS
)
<79>
t
OFF
0
ns
Access time from CAS precharge
<80>
t
ACP
(2 + w
CP
+ w
DA
)T – 28
ns
CAS precharge time
<81>
t
CP
(1 + w
CP
)T – 10
ns
High-speed page mode cycle time
<82>
t
PC
(2 + w
CP
+ w
DA
)T – 10
ns
RAS hold time for CAS precharge
<83>
t
RHCP
(2.5 + w
CP
+ w
DA
)
T –
10
ns
Remarks 1.
T = t
CYK
2.
w
CP
: The number of waits due to the CPCxx bit of the DRCn register (n = 0 to 3, xx = 00 to 03, 10 to
13).
3.
w
DA
: The number of waits due to the DACxx bit of the DRCn register (n = 0 to 3, xx = 00 to 03, 10 to
13).
4.
i: The number of idle states that are inserted when a write cycle follows a read cycle.
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