參數(shù)資料
型號(hào): MT49H32M9C
廠商: Micron Technology, Inc.
英文描述: 288Mb SIO REDUCED LATENCY(RLDRAM II)
中文描述: 288Mb二氧化硅約化延遲(延遲DRAM二)
文件頁(yè)數(shù): 42/44頁(yè)
文件大?。?/td> 1117K
代理商: MT49H32M9C
16 MEG x 18, 32 MEG x 9
2.5V V
EXT
, 1.8V V
DD
, HSTL, SIO, RLDRAM II
pdf: 09005aef80a41b59/zip: 09005aef811ba111
MT49H8M18C_2.fm - Rev. F 11/04 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
42
Figure 41: Output Test Conditions
Figure 42: Input Waveform
Table 20:
+0°C
T
C
+95°C; +1.7V
V
DD
+1.9V, unless otherwise noted
AC Electrical Characteristics and Operating Conditions
DESCRIPTION
CONDITIONS
Matched Impedance Mode
Matched Impedance Mode
SYMBOL
V
IH
V
IL
MIN
MAX
UNITS
V
V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
V
REF
+ 0.2
V
SS
Q - 0.3
V
DD
Q + 0.3
V
REF
- 0.2
Table 21:
Capacitance
DESCRIPTION
CONDITIONS
T
A
= 25°C; f = 1 MHz
SYMBOL
C
I
C
O
C
CK
MIN
1.5
3.5
2.0
MAX
2.5
5.0
3.0
UNITS
pF
pF
pF
Address/Control Input Capacitance
Input/Output Capacitance (D and Q)
Clock Capacitance
10pF
DQ
50
V
TT
Test point
V
IH
(AC) MIN
V
IL
(AC) MAX
Rise Time:
2 V/ns
Fall Time:
2 V/ns
V
DD
Q
GND
V
SWING
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