| 型號 | 廠商 | 描述 |
| nand256r3a0azb6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand128w4a0cza6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand128r4a2bza1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand01gw4a2bv1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand128r3a2bv1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand128w4a0cv6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand512r3a0bn6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand512r3a0czb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand512r3a2bza1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand512r3a2bza1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand512r3a2bzb1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand512r3a2cza6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand512r4a0cza1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand512r4a0cza1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand128w3a0czb1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| nand512w4m5czc5e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| nand512r4m2czb5e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| nand512w3m5bzb5f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| nas-xxx 2 |
Electronic Theatre Controls, Inc. | SEMI-PRECISION POWER WIREWOUND RESISTOR |
| nasxxx 2 |
Electronic Theatre Controls, Inc. | SEMI-PRECISION POWER WIREWOUND RESISTOR |
| nas1581 |
Electronic Theatre Controls, Inc. | 100 DEG FRUSH REDUCED HEAD BOLT |
| nas1581-10 |
Electronic Theatre Controls, Inc. | 100 DEG FRUSH REDUCED HEAD BOLT |
| nas1581-3 |
Electronic Theatre Controls, Inc. | 100 DEG FRUSH REDUCED HEAD BOLT |
| nas1581-4 |
Electronic Theatre Controls, Inc. | 100 DEG FRUSH REDUCED HEAD BOLT |
| nas1581-5 |
Electronic Theatre Controls, Inc. | 100 DEG FRUSH REDUCED HEAD BOLT |
| nas1581-6 |
Electronic Theatre Controls, Inc. | 100 DEG FRUSH REDUCED HEAD BOLT |
| nas1581-7 |
Electronic Theatre Controls, Inc. | 100 DEG FRUSH REDUCED HEAD BOLT |
| nas1581-8 |
Electronic Theatre Controls, Inc. | 100 DEG FRUSH REDUCED HEAD BOLT |
| nas1581-9 |
Electronic Theatre Controls, Inc. | 100 DEG FRUSH REDUCED HEAD BOLT |
| nb2304a 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | 3.3 V Zero Delay Clock Buffer(3.3V零延遲時鐘緩沖器) |
| nb2305a 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | 3.3 V Zero Delay Clock Buffer(3.3V零延遲時鐘緩沖器) |
| nb2780a 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | Low Power, Reduced EMI Clock Synthesizer(低功率,降低EMI時鐘合成器) |
| nb2869a 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | Low Power, Reduced EMI Clock Synthesizer(低功率,降低EMI時鐘合成器) |
| nb2969a 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | Low Power, Reduced EMI Clock Synthesizer(低功率,降低EMI時鐘合成器) |
| nb3l553 2 3 4 5 6 |
ON SEMICONDUCTOR | 2.5V/3.3V/5.0V 1:4 Clock Fanout Buffer(2.5V/3.3V/5.0V，1:4時鐘輸出緩沖器) |
| nb3n2304nz 2 3 4 5 6 7 |
ON SEMICONDUCTOR | 3.3V 1:4 Clock Fanout Buffer(3.3V 1:4 時鐘輸出緩沖器) |
| nb3n3001 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | 3.3 V 106.25 MHz/ 212.5 MHz PureEdge Clock Generator with LVPECL Differential Output(帶LVPECL差分輸出的3.3V 106.25MHz/212.5MHz PureEdge 時鐘生成器) |
| nb3n502 2 3 4 5 |
ON SEMICONDUCTOR | 14 MHz to 190 MHz PLL Clock Multiplier(14MHz到190MHz PLL時鐘倍頻器) |
| nb3n551 2 3 4 5 |
ON SEMICONDUCTOR | 3.3 V / 5.0 V UltraLow Skew 1:4 Clock Fanout Buffer(3.3V/5.0V超低失真1:4時鐘輸入緩沖器) |
| nb4n441 2 3 4 5 6 7 8 9 10 11 12 |
ON SEMICONDUCTOR | 3.3V Serial Input MultiProtocol PLL Clock Synthesizer, Differential LVPECL Output(3.3V串行輸入多協(xié)議PLL時鐘合成器, 差分LVPECL輸出) |
| nb4n840m 2 3 4 5 6 7 8 9 |
ON SEMICONDUCTOR | 3.3V 2.7Gb/s Dual Differential Clock/Data 2 x 2 Crosspoint Switch with CML Output and Internal Termination(帶CML輸出和內(nèi)部終端的3.3V，2.7Gb/s雙差分時鐘/數(shù)據(jù)2x2交點開關(guān)) |
| nb6l11 2 3 4 5 6 7 8 9 10 11 12 |
ON SEMICONDUCTOR | 2.5V / 3.3V MULTILEVEL INPUT TO DIFFERENTIAL LVPECL/LVNECL 1:2 CLOCK OR DATA FANOUT BUFFER / TRANSLATOR |
| nb6l11d 2 3 4 5 6 7 8 9 10 11 12 |
ON SEMICONDUCTOR | 2.5V / 3.3V MULTILEVEL INPUT TO DIFFERENTIAL LVPECL/LVNECL 1:2 CLOCK OR DATA FANOUT BUFFER / TRANSLATOR |
| nb6l11dr2 2 3 4 5 6 7 8 9 10 11 12 |
ON SEMICONDUCTOR | 2.5V / 3.3V MULTILEVEL INPUT TO DIFFERENTIAL LVPECL/LVNECL 1:2 CLOCK OR DATA FANOUT BUFFER / TRANSLATOR |
| nb6l11dt 2 3 4 5 6 7 8 9 10 11 12 |
ON SEMICONDUCTOR | 2.5V / 3.3V MULTILEVEL INPUT TO DIFFERENTIAL LVPECL/LVNECL 1:2 CLOCK OR DATA FANOUT BUFFER / TRANSLATOR |
| nb6l11dtr2 2 3 4 5 6 7 8 9 10 11 12 |
ON SEMICONDUCTOR | 2.5V / 3.3V MULTILEVEL INPUT TO DIFFERENTIAL LVPECL/LVNECL 1:2 CLOCK OR DATA FANOUT BUFFER / TRANSLATOR |
| nb6n14s 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | 3.3 V 1:4 AnyLevel Differential Input to LVDS Fanout Buffer/Translator(3.3V，1:4任一級差分輸入到LVDS輸出緩沖器/轉(zhuǎn)換器) |
| nb7l111m 2 3 4 5 6 7 8 9 10 11 12 13 |
ON SEMICONDUCTOR | 2.5V / 3.3V, 6.125Gb/s 1:10 Differential Clock/Data Driver with CML Output(帶有CML輸出的2.5V/3.3V, 6.125Gb/s，1:10差分時鐘/數(shù)據(jù)驅(qū)動器) |
| nb7l14m 2 3 4 5 6 7 8 9 10 11 |
ON SEMICONDUCTOR | 2.5V/3.3VDifferential 1:4 Clock/Data Fanout Buffer/Translator with CML Outputs and Internal Termination(帶CML輸出和內(nèi)部端口的2.5V/3.3V差分1:4時鐘/數(shù)據(jù)輸出緩沖器/轉(zhuǎn)換器) |
| nb7n017mmn 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
ON SEMICONDUCTOR | 3.3V SiGe 8-Bit Dual Modulus Programmable Divider/Prescaler with CML Outputs |