參數(shù)資料
型號(hào)： NAND512R4A0CZA1
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
中文描述： 128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的頁面，1.8V/3V，NAND閃存芯片
文件頁數(shù)： 15/57頁
文件大小： 410K
代理商： NAND512R4A0CZA1
15/57
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
MEMORY ARRAY ORGANIZATION
The memory array is made up of NAND structures
where 16 cells are connected in series.
The memory array is organized in blocks where
each block contains 32 pages. The array is split
into two areas, the main area and the spare area.
The main area of the array is used to store data
whereas the spare area is typically used to store
Error correction Codes, software flags or Bad
Block identification.
In x8 devices the pages are split into a main area
with two half pages of 256 Bytes each and a spare
area of 16 Bytes. In the x16 devices the pages are
split into a 256 Word main area and an 8 Word
spare area. Refer to
Figure 10., Memory Array Or-
ganization
.
Bad Blocks
The NAND Flash 528 Byte/ 264 Word Page devic-
es may contain Bad Blocks, that is blocks that con-
tain one or more invalid bits whose reliability is not
guaranteed. Additional Bad Blocks may develop
during the lifetime of the device.
The Bad Block Information is written prior to ship-
ping (refer to
Bad Block Management
section for
more details).
Table 4.
shows the minimum number of valid
blocks in each device. The values shown include
both the Bad Blocks that are present when the de-
vice is shipped and the Bad Blocks that could de-
velop later on.
These blocks need to be managed using Bad
Blocks Management, Block Replacement or Error
Correction Codes (refer to
SOFTWARE ALGO-
RITHMS
section).
Table 4. Valid Blocks
Figure 10. Memory Array Organization
Density of Device
Min
Max
1Gbit
8032
8192
512Mbits
4016
4096
256Mbits
2008
2048
128Mbits
1004
1024
AI07587
Block = 32 Pages
Page = 528 Bytes (512+16)
512 Bytes
512 Bytes
Spare Area
2nd half Page
(256 bytes)
B16
Block
Page
8 bits
B16
8 bits
Page Buffer, 512 Bytes
1st half Page
(256 bytes)
Block = 32 Pages
Page = 264 Words (256+8)
256 Words
256 Words
Spare Area
Main Area
W8
16 bits
W8
16 bits
Page Buffer, 264 Words
Block
Page
x8 DEVICES
x16 DEVICES
相關(guān)PDF資料
PDF描述
NAND512R4A0CZA1T 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND128W3A0CZB1 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512W4M5CZC5E 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND512R4M2CZB5E 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND512W3M5BZB5F 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND512R4A2CWFD 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512R4A2CZA6 制造商:Micron Technology Inc 功能描述:512MB. 3V X8 NO OPTION TSOP48TSOP-1 48 12X20 AL 42 - Trays
NAND512R4A2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512W3A0AN6 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND512W3A0AN6E 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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