參數(shù)資料
型號: NAND512W4M5CZC5E
廠商: 意法半導(dǎo)體
元件分類: 存儲器模塊
英文描述: 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
中文描述: 同一封裝內(nèi)整合了256/512Mb/1Gb(x8/x16,1.8/3V,528字節(jié)頁)NAND閃存以及256/512Mb(x16/x32,1.8V的)LPSDRAM的MCP
文件頁數(shù): 17/23頁
文件大?。?/td> 181K
代理商: NAND512W4M5CZC5E
NAND256-M, NAND512-M, NAND01G-M
Package Mechanical
17/23
3
Package Mechanical
Figure 7.
TFBGA107 10.5x13mm - 10x14 active ball array, 0.80mm pitch, Bottom Outline
1.
Drawing not to scale.
TFBGA107 10.5x13mm - 10x14 active ball array, 0.80mm pitch, Mechanical Data
A2
A1
A
BGA-Z24
ddd
D
E
e
b
SE
FD
FE
E1
e
SD
D1
BALL "B1"
Table 6.
Symbol
millimeters
inches
Typ
Min
Max
Typ
Min
Max
A
1.20
0.047
A1
0.25
0.010
A2
0.80
0.031
b
0.45
0.40
0.50
0.018
0.016
0.020
D
10.50
10.40
10.60
0.413
0.409
0.417
D1
7.20
0.283
ddd
0.10
0.004
E
13.00
12.90
13.10
0.512
0.508
0.516
E1
10.40
0.409
e
0.80
0.031
FD
1.65
0.065
FE
1.30
0.051
SD
0.40
0.016
SE
0.40
0.016
相關(guān)PDF資料
PDF描述
NAND512R4M2CZB5E 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND512W3M5BZB5F 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAS-xxx SEMI-PRECISION POWER WIREWOUND RESISTOR
NASxxx SEMI-PRECISION POWER WIREWOUND RESISTOR
NAS1581 100 DEG FRUSH REDUCED HEAD BOLT
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