參數(shù)資料
型號(hào): NAND512W4M5CZC5E
廠商: 意法半導(dǎo)體
元件分類(lèi): 存儲(chǔ)器模塊
英文描述: 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
中文描述: 同一封裝內(nèi)整合了256/512Mb/1Gb(x8/x16,1.8/3V,528字節(jié)頁(yè))NAND閃存以及256/512Mb(x16/x32,1.8V的)LPSDRAM的MCP
文件頁(yè)數(shù): 20/23頁(yè)
文件大?。?/td> 181K
代理商: NAND512W4M5CZC5E
Package Mechanical
NAND256-M, NAND512-M, NAND01G-M
20/23
Figure 10.
TFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Bottom Outline
1.
Subject to change without prior notice.
TFBGA137 10.5x13mm - 10x13 active ball array, 0.80mm pitch
E
D
e
b
SD
A1
A2
A
BGA-Z83
ddd
FD
D1
E1
e
FE
BALL "B1"
Table 9.
Symbol
millimeters
inches
Typ
Min
Max
Typ
Min
Max
A
1.20
0.047
A1
0.25
0.010
A2
0.80
0.031
b
0.45
0.40
0.50
0.018
0.016
0.020
D
10.50
10.40
10.60
0.413
0.409
0.417
D1
7.20
0.283
E
13.00
12.90
13.10
0.512
0.508
0.516
E1
11.20
0.441
e
0.80
0.031
FD
1.65
0.065
FE
0.90
0.035
SD
0.40
0.016
相關(guān)PDF資料
PDF描述
NAND512R4M2CZB5E 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND512W3M5BZB5F 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAS-xxx SEMI-PRECISION POWER WIREWOUND RESISTOR
NASxxx SEMI-PRECISION POWER WIREWOUND RESISTOR
NAS1581 100 DEG FRUSH REDUCED HEAD BOLT
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