參數(shù)資料
型號(hào): NAND256R3A0AZB6
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
中文描述: 128兆,256兆,512兆位,1千兆位(x8/x16)528 Byte/264字的頁(yè)面,1.8V/3V,NAND閃存芯片
文件頁(yè)數(shù): 8/57頁(yè)
文件大小: 916K
代理商: NAND256R3A0AZB6
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
8/57
Table 2. Product Description
Note: 1. Dual Die device.
Figure 2. Logic Diagram
Table 3. Signal Names
Reference
Part Number
Density
Bus
Width
Page
Size
Block
Size
Memory
Array
Operating
Voltage
Timings
Package
Random
Access
Max
Sequential
Access
Min
Page
Program
Typical
Block
Erase
Typical
NAND128-A
NAND128R3A
128Mbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
1024 Blocks
1.7 to 1.95V
12μs
60ns
200μs
2ms
TSOP48
USOP48
VFBGA55
NAND128W3A
2.7 to 3.6V
12μs
50ns
200μs
NAND128R4A
x16
256+8
Words
8K+256
Words
1.7 to 1.95V
12μs
60ns
200μs
NAND128W4A
2.7 to 3.6V
12μs
50ns
200μs
NAND256-A
NAND256R3A
256Mbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
2048 Blocks
1.7 to 1.95V
12μs
60ns
200μs
2ms
TSOP48
USOP48
VFBGA55
NAND256W3A
2.7 to 3.6V
12μs
50ns
200μs
NAND256R4A
x16
256+8
Words
8K+256
Words
1.7to 1.95V
12μs
60ns
200μs
NAND256W4A
2.7 to 3.6V
12μs
50ns
200μs
NAND512-A
(1)
NAND512R3A
512Mbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
4096 Blocks
1.7to 1.95V
12μs
60ns
200μs
2ms
TFBGA55
NAND512W3A
2.7 to 3.6V
12μs
50ns
200μs
NAND512R4A
x16
256+8
Words
8K+256
Words
1.7 to 1.95V
12μs
60ns
200μs
NAND512W4A
2.7 to 3.6V
12μs
50ns
200μs
NAND512-A
NAND512R3A
512Mbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
4096 Blocks
1.7to 1.95V
15μs
60ns
200μs
2ms
TSOP48
USOP48
VFBGA63
NAND512W3A
2.7 to 3.6V
12μs
50ns
200μs
NAND512R4A
x16
256+8
Words
8K+256
Words
1.7 to 1.95V
15μs
60ns
200μs
NAND512W4A
2.7 to 3.6V
12μs
50ns
200μs
NAND01G-A
NAND01GR3A
1Gbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
8192 Blocks
1.7 to 1.95V
15μs
60ns
200μs
2ms
TSOP48
TFBGA63
NAND01GW3A
2.7 to 3.6V
12μs
50ns
200μs
NAND01GR4A
x16
256+8
Words
8K+256
Words
1.7 to 1.95V
15μs
60ns
200μs
NAND01GW4A
2.7 to 3.6V
12μs
50ns
200μs
AI07557C
W
I/O8-I/O15, x16
VDD
NAND Flash
E
VSS
WP
AL
CL
RB
R
I/O0-I/O7, x8/x16
I/O8-15
Data Input/Outputs for x16 devices
I/O0-7
Data Input/Outputs, Address Inputs,
or Command Inputs for x8 and x16
devices
AL
Address Latch Enable
CL
Command Latch Enable
E
Chip Enable
R
Read Enable
RB
Ready/Busy (open-drain output)
W
Write Enable
WP
Write Protect
V
DD
Supply Voltage
V
SS
Ground
NC
Not Connected Internally
DU
Do Not Use
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PDF描述
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NAND256R3A2BWFD 制造商:Micron Technology Inc 功能描述:NAND 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND256R3A2BZA6E 功能描述:閃存 128 Mbit 256 Mbit 512 Mbit 1 Gbit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND256W3A0AN6 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND256W3A0AN6E 功能描述:閃存 2.7-3.6V 256M(32Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND256W3A0AN6F 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel