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參數(shù)資料
| 型號(hào)： | WEDPNF8M721V-1012BC |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA275 |
| 封裝： | 32 X 25 MM, PLASTIC, BGA-275 |
| 文件頁數(shù)： | 22/42頁 |
| 文件大?。?/td> | 686K |
| 代理商： | WEDPNF8M721V-1012BC |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WEDPNF8M721V-XBX
FLASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED
(VCC = 3.3V, TA = -55
°C to +125°C)
Parameter
Symbol
-100
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
tAVAV
tWC
100
120
150
ns
Chip Select Setup Time
tELWL
tCS
00
0
ns
Write Enable Pulse Width
tWLWH
tWP
50
65
ns
Address Setup Time
tAVWL
tAS
00
0
ns
Data Setup Time
tDVWH
tDS
50
65
ns
Data Hold Time
tWHDX
tDH
00
0
ns
Address Hold Time
tWLAX
tAH
50
65
ns
Write Enable Pulse Width High
tWHWL
tWPH
30
35
ns
Duration of Byte Programming Operation (1)
tWHWH1
300
s
Sector Erase
tWHWH2
15
sec
Read Recovery Time before Write (3)
tGHWL
00
0
s
VCC Setup Time
tVCS
50
s
Chip Programming Time
50
sec
Output Enable Setup Time
tOES
00
0
ns
Output Enable Hold Time (2)
tOEH
10
ns
1. Typical value for tWHWH1 is 9
s.
2. For Toggle and Data Polling.
3. Guaranteed by design, but not tested.
FLASH AC CHARACTERISTICS – READ-ONLY OPERATIONS
(VCC = 3.3V, TA = -55
°C to +125°C)
Parameter
Symbol
-100
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
tAVAV
tRC
100
120
150
ns
Address Access Time
tAVQV
tACC
100
120
150
ns
Chip Select Access Time
tELQV
tCE
100
120
150
ns
Output Enable to Output Valid
tGLQV
tOE
40
50
55
ns
Chip Select High to Output High Z (1)
tEHQZ
tDF
30
40
ns
Output Enable High to Output High Z (1)
tGHQZ
tDF
30
40
ns
Output Hold from Addresses, FCS or FOE Change,
tAXQX
tOH
000
ns
whichever is First
1. Guaranteed by design, not tested.
FIG. 10 AC TEST CIRCUIT
AC TEST CONDITIONS
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75
.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 2.5
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
I
Current Source
D.U.T.
C
= 50 pf
eff
I
OL
V
≈ 1.5V
(Bipolar Supply)
Z
Current Source
OH
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| WEDPNF8M721V-1012BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1012BM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1015BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1015BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1015BM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
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