參數資料
型號： ST62E30BF1
英文描述： MICROCONTROLLER|8-BIT|ST6200 CPU|CMOS|DIP|28PIN|CERAMIC
中文描述： 單片機| 8位| ST6200的CPU |的CMOS |雙酯| 28腳|陶瓷
文件頁數： 74/86頁
文件大?。?/td> 531K
代理商： ST62E30BF1
74/86
ST62T30B ST62E30B
7.3 DC ELECTRICAL CHARACTERISTICS
(T
A
= -40 to +125
°
C unless otherwise specified)
Notes:
(1) Hysteresis voltage between switching levels
(2) All peripherals running
(3) All peripherals in stand-by
(T
A
= -40 to +85
°
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Value
Unit
Min.
Typ.
Max.
V
IL
Input Low Level Voltage
All Input pins
Input High Level Voltage
All Input pins
V
DD
x 0.3
V
V
IH
V
DD
x 0.7
V
V
Hys
Hysteresis Voltage
(1)
All Input pins
V
DD
= 5V
V
DD
= 3V
0.2
0.2
V
V
OL
Low Level Output Voltage
All Output pins
V
DD
= 5.0V; I
OL
= +10
μ
A
V
DD
= 5.0V; I
OL
= + 3mA
V
DD
= 5.0V; I
OL
= +10
μ
A
V
DD
= 5.0V; I
OL
= +7mA
V
DD
= 5.0V; I
OL
= +15mA
V
DD
= 5.0V; I
OL
= -10
μ
A
V
DD
= 5.0V; I
OL
= -3.0mA
All Input pins
RESET pin
V
IN
= V
SS
(No Pull-Up configured)
V
IN
= V
DD
V
IN
= V
SS
V
IN
= V
DD
V
RESET
=V
SS
f
OSC
=8MHz
0.1
0.8
0.1
0.8
1.3
V
Low Level Output Voltage
20 mA Sink I/O pins
V
OH
High Level Output Voltage
All Output pins
4.9
3.5
40
150
V
R
PU
Pull-up Resistance
100
350
200
900
Κ
I
IL
I
IH
Input Leakage Current
All Input pins but RESET
Input Leakage Current
RESET pin
Supply Current in RESET
Mode
Supply Current in
RUN Mode
(2)
Supply Current in WAIT
Mode
(3)
Supply Current in STOP
Mode
(3)
0.1
1.0
μ
A
-8
-16
-30
10
I
DD
7
mA
V
DD
=5.0V f
INT
=8MHz, T
A
< 85
°
C
7
mA
V
DD
=5.0V
f
INT
=8MHz, T
A
< 85
°
C
2
mA
I
LOAD
= 0mA
V
DD
= 5.0V
20
μ
A
Symbol
Parameter
Test Conditions
Value
Unit
Min.
Typ.
Max.
0.1
0.8
0.1
0.8
1.3
V
OL
Low Level Output Voltage
All Output pins
V
DD
= 5.0V; I
OL
= +10
μ
A
V
DD
= 5.0V; I
OL
= + 5mA
V
DD
= 5.0V; I
OL
= +10
μ
A
V
DD
= 5.0V; I
OL
= +10mA
V
DD
= 5.0V; I
OL
= +20mA
V
DD
= 5.0V; I
OL
= -10
μ
A
V
DD
= 5.0V; I
OL
= -5.0mA
I
LOAD
= 0mA
V
DD
= 5.0V
V
Low Level Output Voltage
20 mA Sink I/O pins
V
OH
High Level Output Voltage
All Output pins
Supply Current in STOP
Mode
4.9
3.5
V
I
DD
10
μ
A
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