參數(shù)資料
型號: ST62E30BF1
英文描述: MICROCONTROLLER|8-BIT|ST6200 CPU|CMOS|DIP|28PIN|CERAMIC
中文描述: 單片機| 8位| ST6200的CPU |的CMOS |雙酯| 28腳|陶瓷
文件頁數(shù): 72/86頁
文件大小: 531K
代理商: ST62E30BF1
72/86
ST62T30B ST62E30B
7 ELECTRICAL CHARACTERISTICS
7.1 ABSOLUTE MAXIMUM RATINGS
This product contains devices to protect the inputs
against damage due to high static voltages, how-
ever it is advisable to take normal precaution to
avoid application of any voltage higher than the
specified maximum rated voltages.
For proper operation it is recommended that V
I
and V
be higher than V
and lower than V
.
Reliability is enhanced if unused inputs are con-
nected to an appropriate logic voltage level (V
DD
or V
SS
).
Power Considerations
.The average chip-junc-
tion temperature, Tj, in Celsius can be obtained
from:
Tj=TA + PD x RthJA
Where:TA = Ambient Temperature.
RthJA =Package thermal resistance (junc-
tion-to ambient).
PD = Pint + Pport.
Pint =I
DD
x V
DD
(chip internal power).
Pport =Port power dissipation (determined
by the user).
Notes:
-
Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
- (1)Within these limits, clamping diodes are guarantee tobe not conductive. Voltages outside these limits are authorised as long as injection
current is kept within the specification.
Symbol
V
DD
V
I
V
O
I
O
IV
DD
IV
SS
Tj
T
STG
Parameter
Value
-0.3 to 7.0
Unit
V
V
V
mA
mA
mA
°
C
°
C
Supply Voltage
Input Voltage
Output Voltage
Current Drain per Pin Excluding V
DD
, V
SS
Total Current into V
DD
(source)
Total Current out of V
SS
(sink)
Junction Temperature
Storage Temperature
V
SS
- 0.3 to V
DD
+ 0.3
(1)
V
SS
- 0.3 to V
DD
+ 0.3
(1)
±
10
50
50
150
-60 to 150
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