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參數(shù)資料
| 型號： | MT49H32M9CFM-xx |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 288Mb SIO REDUCED LATENCY(RLDRAM II) |
| 中文描述： | 288Mb二氧化硅約化延遲（延遲DRAM二） |
| 文件頁數(shù)： | 30/44頁 |
| 文件大小： | 1117K |
| 代理商： | MT49H32M9CFM-XX |
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16 MEG x 18, 32 MEG x 9
2.5V V
EXT
, 1.8V V
DD
, HSTL, SIO, RLDRAM II
pdf: 09005aef80a41b59/zip: 09005aef811ba111
MT49H8M18C_2.fm - Rev. F 11/04 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
30
Operation with Multiplexed Addresses
In multiplexed address mode, the address can be
provided to the RLDRAM in two parts that are latched
into the memory with two consecutive rising clock
edges. This provides the advantage that a maximum SP
of 11 address balls are required to control the
RLDRAM, reducing the number of balls on the control-
ler side. The bank addresses are delivered to the
RLDRAM at the same time as the write command and
the first address part, Ax.
This option is available by setting bit A5 to “1” in the
mode register. Once this bit is set, the READ, WRITE,
and MRS commands follow the format described in
Figure 32. See Figure 34 on page 31 for the power-up
sequence.
Figure 32: Command Description in Multiplexed Address Mode
NOTE:
1. Ax, Ay: Address
BA: Bank Address
2. The minimum setup and hold times of the two address parts are defined
t
AS and
t
AH.
CK#
CK
WE#
REF#
CS#
Ax
BA
A<20:0>
BA<2:0>
READ
Ay
Ax
BA
WRITE
Ay
Ax
BA
DON’T CARE
MRS
Ay
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| MT49H32M9CHU-25 | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 288MBIT 1.8V 144FBGA - Trays |
| MT49H32M9CHU-33 | 制造商:Micron Technology Inc 功能描述:32MX9 RLDRAM PLASTIC FBGA 1.8V SEPARATE I/O 8 BANKS 1.8V I/O - Trays |
| MT49H32M9CHU-5 | 制造商:Micron Technology Inc 功能描述:32MX9 RLDRAM PLASTIC FBGA 1.8V SEPARATE I/O 8 BANKS 1.8V I/O - Trays |
| MT49H32M9FM-25 | 制造商:Micron Technology Inc 功能描述: |
| MT49H32M9FM-25 TR | 功能描述:IC RLDRAM 288MBIT 400MHZ 144FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標準包裝:84 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 ZBT 存儲容量:4.5M（128K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA（14x22） 包裝:托盤 其它名稱:71V3557SA75BGI |
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