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參數(shù)資料
| 型號(hào)： | MT48V16M16LFFG |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | MOBILE SDRAM |
| 中文描述： | 移動(dòng)SDRAM |
| 文件頁(yè)數(shù)： | 46/58頁(yè) |
| 文件大?。?/td> | 1451K |
| 代理商： | MT48V16M16LFFG |
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46
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
256Mb: x16
MOBILE SDRAM
ADVANCE
SINGLE READ – WITH AUTO PRECHARGE
1
ENABLE AUTO PRECHARGE
tCH
tCL
tCK
tRP
tRAS
tRC
tRCD
CAS Latency
DQM /
DQML, DQMU
CKE
CLK
A0-A9, A11
DQ
BA0, BA1
A10
tCMH
tCMS
tAH
tAS
tAH
tAS
tAH
tAS
ROW
ROW
BANK
BANK
ROW
ROW
BANK
DON’T CARE
UNDEFINED
tHZ
tOH
D
OUT
m
tAC
COMMAND
tCMH
tCMS
NOP2
READ
ACTIVE
NOP
NOP2
ACTIVE
NOP
tCKH
tCKS
COLUMN
m
3
T0
T1
T2
T4
T3
T5
T6
T7
T8
NOP
NOP
NOTE:
1. For this example, the burst length = 1, and the CAS latency = 2.
2. READ command not allowed else
t
RAS would be violated since AUTO PRECHARGE is enabled.
3. x16: A9, A11 and A12 = “Don’t Care”
*CAS latency indicated in parentheses.
-8
-10
SYMBOL*
t
CMH
t
CMS
t
HZ (3)
t
HZ (2)
t
HZ (1)
t
LZ
t
OH
t
RAS
t
RC
t
RCD
t
RP
MIN
1
2.5
MAX
MIN
1
2.5
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7
8
19
7
8
22
1
1
2.5
48
80
20
20
2.5
50
100
20
20
120,000
120,000
TIMING PARAMETERS
-8
-10
SYMBOL*
t
AC (3)
t
AC (2)
t
AC (1)
t
AH
t
AS
t
CH
t
CL
t
CK (3)
t
CK (2)
t
CK (1)
t
CKH
t
CKS
MIN
MAX
7
8
19
MIN
MAX
7
8
22
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
1
2.5
3
3
8
10
20
1
2.5
2.5
3
3
10
12
25
1
2.5
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