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參數(shù)資料
| 型號： | MT48V16M16LFFG |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | MOBILE SDRAM |
| 中文描述： | 移動SDRAM |
| 文件頁數(shù)： | 36/58頁 |
| 文件大?。?/td> | 1451K |
| 代理商： | MT48V16M16LFFG |
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36
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
256Mb: x16
MOBILE SDRAM
ADVANCE
I
DD
7
- SELF REFRESH CURRENT OPTIONS (Temperature Compensated Self Refresh)
(Notes: 1, 6, 11, 13; notes appear on page 37) V
DD
= 2.5 ±0.2V or +1.8V ±0.15V, V
DDQ
= +1.8V ±0.15V
Temperature Compensated Self Refresh
Parameter/Condition
Self Refresh
Current:
CKE < 0.2V
Max
-8
-10
UNITS
NOTES
Temperature
85°C
70°C
45°C
15°C
600
350
200
160
600
350
200
160
μA
μA
μA
μA
4
4
4
4
I
DD
SPECIFICATIONS AND CONDITIONS
(Notes: 1, 5, 6, 11, 13; notes appear on page 37;V
DD
= 2.5 ±0.2V or +1.8V ±0.15V, V
DDQ
= +1.8V ±0.15V )
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN)
STANDBY CURRENT: Power-Down Mode;
All banks idle; CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH;
All banks active after
t
RCD met; No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE; All banks active
AUTO REFRESH CURRENT
CKE = HIGH; CS# = HIGH
SYMBOL
I
DD
1
-8
78
-10
75
UNITS NOTES
mA
19, 32
μA
3, 18,
I
DD
2
350
350
32
I
DD
3
25
25
mA
3, 12,
19, 32
3, 18,
19, 32
3, 12,
18, 19,
32, 33
I
DD
4
90
80
mA
t
RFC =
t
RFC (MIN)
I
DD
5
160
150
mA
t
RFC = 7.8μs
I
DD
6
2.5
2.5
mA
DEEP POWER DOWN
I
DD
8
10
10
μA
MAX
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