參數(shù)資料
型號(hào)： MT48V16M16LFFG
廠商： Micron Technology, Inc.
英文描述： MOBILE SDRAM
中文描述： 移動(dòng)SDRAM
文件頁(yè)數(shù)： 32/58頁(yè)
文件大小： 1451K
代理商： MT48V16M16LFFG
32
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
256Mb: x16
MOBILE SDRAM
ADVANCE
NOTE: (continued)
4. AUTO REFRESH, SELF REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle.
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state
only.
6. All states and sequences not shown are illegal or reserved.
7. READs or WRITEs to bank
m
listed in the Command (Action) column include READs or WRITEs with auto precharge
enabled and READs or WRITEs with auto precharge disabled.
8. CONCURRENT AUTO PRECHARGE: Bank
n
will initiate the auto precharge command when its burst has been interrupted
by bank m’s burst.
9. Burst in bank
n
continues as initiated.
10. For a READ without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank
m
will
interrupt the READ on bank n, CAS latency later (Figure 7).
11. For a READ without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank
m
will
interrupt the READ on bank
n
when registered (Figures 9 and 10). DQM should be used one clock prior to the WRITE
command to prevent bus contention.
12. For a WRITE without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank
m
will
interrupt the WRITE on bank
n
when registered (Figure 17), with the data-out appearing CAS latency later. The last
valid WRITE to bank
n
will be data-in registered one clock prior to the READ to bank
m
.
13. For a WRITE without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank
m
will interrupt the WRITE on bank
n
when registered (Figure 15). The last valid WRITE to bank
n
will be data-in
registered one clock prior to the READ to bank
m
.
14. For a READ with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank
m
will
interrupt the READ on bank n, CAS latency later. The PRECHARGE to bank
n
will begin when the READ to bank
m
is
registered (Figure 24).
15. For a READ with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank
m
will
interrupt the READ on bank
n
when registered. DQM should be used two clocks prior to the WRITE command to prevent
bus contention. The PRECHARGE to bank
n
will begin when the WRITE to bank
m
is registered (Figure 25).
16. For a WRITE with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank
m
will
interrupt the WRITE on bank
n
when registered, with the data-out appearing CAS latency later. The PRECHARGE to bank
n
will begin after
t
WR is met, where
t
WR begins when the READ to bank
m
is registered. The last valid WRITE to bank
n
will be data-in registered one clock prior to the READ to bank
m
(Figure 26).
17. For a WRITE with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank
m
will
interrupt the WRITE on bank
n
when registered. The PRECHARGE to bank
n
will begin after
t
WR is met, where
t
WR
begins when the WRITE to bank
m
is registered. The last valid WRITE to bank
n
will be data registered one clock prior
to the WRITE to bank
m
(Figure 27).
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