參數(shù)資料
型號： MT48V16M16LFFG
廠商： Micron Technology, Inc.
英文描述： MOBILE SDRAM
中文描述： 移動SDRAM
文件頁數(shù)： 25/58頁
文件大?。?/td> 1451K
代理商： MT48V16M16LFFG
25
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
256Mb: x16
MOBILE SDRAM
ADVANCE
DON’T CARE
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
BANK,
COL
n
NOP
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
NOTE:
For this example, CAS latency = 2, burst length = 4 or greater, and
DQM is LOW.
CKE
INTERNAL
CLOCK
NOP
Figure 23
Clock Suspend During READ Burst
BURST READ/SINGLE WRITE
The burst read/single write mode is entered by pro-
gramming the write burst mode bit (M9) in the mode
register to a logic 1. In this mode, all WRITE commands
result in the access of a single column location (burst of
one), regardless of the programmed burst length. READ
commands access columns according to the pro-
grammed burst length and sequence, just as in the
normal mode of operation (M9 = 0).
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