- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384756 > MT48V16M16LFFG (Micron Technology, Inc.) MOBILE SDRAM PDF資料下載
參數(shù)資料
| 型號： | MT48V16M16LFFG |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | MOBILE SDRAM |
| 中文描述： | 移動SDRAM |
| 文件頁數(shù)： | 30/58頁 |
| 文件大?。?/td> | 1451K |
| 代理商： | MT48V16M16LFFG |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁當前第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁
30
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
256Mb: x16
MOBILE SDRAM
ADVANCE
NOTE (continued):
5. The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP commands must
be applied on each positive clock edge during these states.
Refreshing: Starts with registration of an AUTO REFRESH command and ends when
t
RC is met. Once
t
RC is
met, the SDRAM will be in the all banks idle state.
Accessing Mode
Register: Starts with registration of a LOAD MODE REGISTER command and ends when
t
MRD has been
met. Once
t
MRD is met, the SDRAM will be in the all banks idle state.
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when
t
RP is met. Once
t
RP is
met, all banks will be in the idle state.
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle.
8. May or may not be bank-specific; if all banks are to be precharged, all must be in a valid state for precharging.
9. Deep Power-Down is a power savings feature of this BAT-RAM device. This command is Burst Terminate on
traditional SDRAM components. For Bat Ram devices, this command sequence is assigned to Deep Power Down.
10. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with auto precharge enabled and
READs or WRITEs with auto precharge disabled.
11. Does not affect the state of the bank and acts as a NOP to that bank.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT48H16M16LFFG | MOBILE SDRAM |
| MT49H16M18C | 288Mb SIO REDUCED LATENCY(RLDRAM II) |
| MT49H16M18CFM-xx | 288Mb SIO REDUCED LATENCY(RLDRAM II) |
| MT49H32M9C | 288Mb SIO REDUCED LATENCY(RLDRAM II) |
| MT49H32M9CFM-xx | 288Mb SIO REDUCED LATENCY(RLDRAM II) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT48V16M32L2B5-8 IT | 制造商:Micron Technology Inc 功能描述:DRAM Chip Mobile SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA Tray |
| MT48V16M32L2F5-8 IT | 制造商:Micron Technology Inc 功能描述:DRAM Chip Mobile SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA Tray |
| MT48V32M16S2FG-10 | 制造商:Micron Technology Inc 功能描述:32MX16 SSDRAM PLASTIC 2BOC 2.5V - Trays |
| MT48V32M16S2FG-8 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP MOBILE SDRAM 512MBIT 2.5V 54FBGA - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。