- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384756 > MT48V16M16LFFG (Micron Technology, Inc.) MOBILE SDRAM PDF資料下載
參數(shù)資料
| 型號： | MT48V16M16LFFG |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | MOBILE SDRAM |
| 中文描述： | 移動SDRAM |
| 文件頁數(shù)： | 33/58頁 |
| 文件大?。?/td> | 1451K |
| 代理商： | MT48V16M16LFFG |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁當前第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁
33
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
256Mb: x16
MOBILE SDRAM
ADVANCE
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS - V version
(Notes: 1, 5, 6; notes appear on page 37; V
DD
= 2.5 ±0.2V, V
DDQ
= +1.8V ±0.15V )
PARAMETER/CONDITION
SUPPLY VOLTAGE
I/O SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
DATA OUTPUT HIGH VOLTAGE: Logic 1; All inputs
DATA OUTPUT LOW VOLTAGE: LOGIC 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V
≤
V
IN
≤
V
DD
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQs are disabled; 0V
≤
V
OUT
≤
V
DD
Q
SYMBOL
V
DD
V
DDQ
V
IH
V
IL
V
OH
V
OL
I
I
MIN
2.3
1.65
1.25
-0.3
MAX
2.7
1.95
V
DD
+ 0.3
0.55
–
0.2
1.0
UNITS NOTES
V
V
V
V
V
V
μA
22
22
V
DD
Q -0.2
–
-1.0
I
OZ
-1.5
1.5
μA
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS - H version
(Notes: 1, 5, 6; notes appear on page 37; V
DD
= 1.8 ±0.15V, V
DDQ
= +1.8V ±0.15V )
PARAMETER/CONDITION
SUPPLY VOLTAGE
I/O SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
DATA OUTPUT HIGH VOLTAGE: Logic 1; All inputs
DATA OUTPUT LOW VOLTAGE: LOGIC 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V
≤
V
IN
≤
V
DD
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQs are disabled; 0V
≤
V
OUT
≤
V
DD
Q
SYMBOL
V
DD
V
DDQ
V
IH
V
IL
V
OH
V
OL
I
I
MIN
1.65
1.65
0.8*V
DD
Q
-0.3
V
DD
Q -0.2
–
-1.0
MAX
1.95
1.95
V
DD
+ 0.3
0.3
–
0.2
1.0
UNITS NOTES
V
V
V
V
V
V
μA
22
22
I
OZ
-1.5
1.5
μA
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
/V
DD
Q Supply
Relative to V
SS
(2.5V)..........................-0.5V to +3.6V
Relative to V
SS
(1.8V)....................... -0.35V to +2.8V
Voltage on Inputs, NC or I/O Pins
Relative to V
SS
(1.8V)...................... -0.35V to +2.8V
Operating Temperature,
T
A
(industrial; IT parts) ..................... -40°C to +85°C
Storage Temperature (plastic) ............-55°C to +150°C
Power Dissipation ........................................................ 1W
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT48H16M16LFFG | MOBILE SDRAM |
| MT49H16M18C | 288Mb SIO REDUCED LATENCY(RLDRAM II) |
| MT49H16M18CFM-xx | 288Mb SIO REDUCED LATENCY(RLDRAM II) |
| MT49H32M9C | 288Mb SIO REDUCED LATENCY(RLDRAM II) |
| MT49H32M9CFM-xx | 288Mb SIO REDUCED LATENCY(RLDRAM II) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT48V16M32L2B5-8 IT | 制造商:Micron Technology Inc 功能描述:DRAM Chip Mobile SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA Tray |
| MT48V16M32L2F5-8 IT | 制造商:Micron Technology Inc 功能描述:DRAM Chip Mobile SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA Tray |
| MT48V32M16S2FG-10 | 制造商:Micron Technology Inc 功能描述:32MX16 SSDRAM PLASTIC 2BOC 2.5V - Trays |
| MT48V32M16S2FG-8 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP MOBILE SDRAM 512MBIT 2.5V 54FBGA - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。