參數(shù)資料
型號: HYB18T512160AF
廠商: INFINEON TECHNOLOGIES AG
英文描述: 512-Mbit DDR2 SDRAM
中文描述: 512兆位DDR2 SDRAM的
文件頁數(shù): 82/117頁
文件大?。?/td> 2102K
代理商: HYB18T512160AF
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
AC & DC Operating Conditions
Data Sheet
82
Rev. 1.3, 2005-01
09112003-SDM9-IQ3P
5.5
Full Strength Output V-I Characteristics
DDR2 SDRAM output driver characteristics are defined
for full strength default operation as selected by the
EMRS(1) bits A[9:7] =’111’.
Figure 66
and
Figure 67
show the driver characteristics graphically and the
tables show the same data suitable for input into
simulation tools.
Table 34
Voltage (V)
Full Strength Default Pull-up Driver Characteristics
Pull-up Driver Current [mA]
Min.
1)
0.00
–4.30
–8.6
–12.9
–16.9
–20.05
–22.10
–23.27
–24.10
–24.73
–25.23
–25.65
–26.02
–26.35
–26.65
–26.93
–27.20
–27.46
1) The driver characteristics evaluation conditions are Minimum 95 °C (
T
CASE
),
V
DDQ
= 1.7 V, slow–slow process
2) The driver characteristics evaluation conditions are Nominal Default 25 °C (
T
CASE
),
V
DDQ
= 1.8 V, typical process
3) The driver characteristics evaluation conditions are Maximum 0 °C (
T
CASE
).
V
DDQ
= 1.9 V, fast–fast process
IBIS Target low
2)
0.00
–5.55
–11.10
–16.0
–20.3
–24.0
–27.2
–29.8
–31.9
–33.4
–34.6
–35.5
–36.2
–36.8
–37.2
–37.7
–38.0
–38.4
–38.6
IBIS Target high
2)
0.00
–5.90
–11.8
–17.0
–22.2
–27.5
–32.4
–36.9
–40.8
–44.5
–47.7
–50.4
–52.5
–54.2
–55.9
–57.1
–58.4
–59.6
–60.8
Max.
3)
0.00
–7.95
–15.90
–23.85
–31.80
–39.75
–47.70
–55.55
–62.95
–69.55
–75.35
–80.35
–84.55
–87.95
–90.70
–93.00
–95.05
–97.05
–99.05
–101.05
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
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