參數(shù)資料
型號(hào): HYB18T1G800C4F-3
廠商: QIMONDA AG
元件分類: DRAM
英文描述: 128M X 8 DDR DRAM, 0.45 ns, PBGA60
封裝: GREEN, PLASTIC, TFBGA-60
文件頁數(shù): 26/58頁
文件大?。?/td> 1898K
代理商: HYB18T1G800C4F-3
HYB18T1G[40/80/16]0C4F
1-Gbit Double-Data-Rate-Two SDRAM
Internet Data Sheet
Rev. 1.01, 2008-11
32
04212008-66HT-ZLFE
TABLE 28
OCD Default Characteristics
Symbol Description
Min.
Nominal
Max.
Unit
Notes
Output Impedance
Ω
1)2)
1)
V
DDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V
2) Impedance measurement condition for output source dc current:
V
DDQ = 1.7 V, VOUT = 1420 mV; (VOUTVDDQ) / IOH must be less than 23.4
ohms for values of
V
OUT between VDDQ and VDDQ – 280 mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7 V;
V
OUT = –280 mV; VOUT / IOL must be less than 23.4 Ohms for values of VOUT between 0 V and 280 mV.
Pull-up / Pull down mismatch
0
4
Ω
3) Mismatch is absolute value between pull-up and pull-down, both measured at same temperature and voltage.
Output Impedance step size for OCD calibration
0
1.5
Ω
4)
4) This represents the step size when the OCD is near 18 ohms at nominal conditions across all process parameters and represents only the
DRAM uncertainty. A 0 Ohm value (no calibration) can only be achieved if the OCD impedance is 18
± 0.75 Ohms under nominal
conditions.
S
OUT
Output Slew Rate
1.5
5.0
V / ns
1)5)6)7)
5) The absolute value of the Slew Rate as measured from DC to DC is equal to or greater than the Slew Rate as measured from AC to AC.
This is verified by design and characterization but not subject to production test.
6) Timing skew due to DRAM output Slew Rate mis-match between DQS / DQS and associated DQ’s is included in
t
DQSQ and tQHS
specification.
7) DRAM output Slew Rate specification applies to 400, 533 and 667 MT/s speed bins.
相關(guān)PDF資料
PDF描述
HYB3165800AJ-40 8M X 8 FAST PAGE DRAM, 40 ns, PDSO32
HYB39S64400AT-8 16M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
HYC532410-50 4M X 32 MULTI DEVICE DRAM CARD, 50 ns, XMA88
HYE18M256320CF-7.5 8M X 32 DDR DRAM, 6 ns, PBGA90
HYM564124AR-60 1M X 64 EDO DRAM MODULE, DMA168
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T256400AF-3.7 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60
HYB18T256400AF-5 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA
HYB18T256800AF-5 制造商:Infineon Technologies AG 功能描述:
HYB18T512161BF-25 制造商:Qimonda 功能描述:SDRAM, DDR, 32M x 16, 84 Pin, Plastic, BGA
HYB18T512400AF-5 制造商:Intersil Corporation 功能描述:SDRAM, DDR, 128M x 4, 60 Pin, Plastic, BGA