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參數資料
| 型號： | HYB18T1G800C4F-3 |
| 廠商： | QIMONDA AG |
| 元件分類： | DRAM |
| 英文描述： | 128M X 8 DDR DRAM, 0.45 ns, PBGA60 |
| 封裝： | GREEN, PLASTIC, TFBGA-60 |
| 文件頁數： | 21/58頁 |
| 文件大?。?/td> | 1898K |
| 代理商： | HYB18T1G800C4F-3 |
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HYB18T1G[40/80/16]0C4F
1-Gbit Double-Data-Rate-Two SDRAM
Internet Data Sheet
Rev. 1.01, 2008-11
28
04212008-66HT-ZLFE
5.2
DC Characteristics
TABLE 20
Recommended DC Operating Conditions (SSTL_18)
TABLE 21
ODT DC Electrical Characteristics
TABLE 22
Input and Output Leakage Currents
Symbol
Parameter
Rating
Unit
Note
Min.
Typ.
Max.
V
DD
Supply Voltage
1.7
1.8
1.9
V
1)
V
DDQ tracks with VDD, VDDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDDL tied together.
V
DDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
V
DDQ
Supply Voltage for Output
1.7
1.8
1.9
V
V
REF
Input Reference Voltage
0.49
× V
DDQ
0.5
× V
DDQ
0.51
× V
DDQ
V
2)3)
2) The value of
V
REF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to
be about 0.5
× V
DDQ of the transmitting device and VREF is expected to track variations in VDDQ.
3) Peak to peak ac noise on
V
REF may not exceed ± 2% VREF (dc)
V
TT
Termination Voltage
V
REF – 0.04
V
REF
V
REF + 0.04
V
4)
V
TT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and
must track variations in die dc level of
V
REF.
Parameter / Condition
Symbol Min.
Nom. Max.
Unit Note
Termination resistor impedance value for EMRS(1)[A6,A2] = [0,1]; 75 Ohm
Rtt1(eff) 60
75
90
Ω
1)
Measurement Definition for Rtt(eff): Apply VIH(ac) and VIL(ac) to test pin separately, then measure current I(VIHac) and I(VILac) respectively.
Rtt(eff) = (VIH(ac) – VIL(ac)) /(I(VIHac) – I(VILac)).
Termination resistor impedance value for EMRS(1)[A6,A2] =[1,0]; 150 Ohm Rtt2(eff) 120
150
180
Ω
Termination resistor impedance value for EMRS(1)(A6,A2)=[1,1]; 50 Ohm
Rtt3(eff) 40
50
60
Ω
1)2)
2) Optional for DDR2-400, DDR2-533 and DDR2-667, mandatory for DDR2-800.
Deviation of VM with respect to VDDQ / 2
delta VM –6.00 —
+ 6.00
%
3)
3) Measurement Definition for VM: Turn ODT on and measure voltage (VM) at test pin (midpoint) with no load:
delta VM =((2 xVM /VDDQ) – 1) x 100%.
Symbol
Parameter / Condition
Min.
Max.
Unit
Note
I
IL
Input Leakage Current; any input 0 V <
V
IN < VDD
–2
+2
μA
1)
1) All other pins not under test = 0 V.
I
OL
Output Leakage Current; 0 V <
V
OUT < VDDQ
–5
+5
μA
2)
2) DQ’s, LDQS, LDQS, UDQS, UDQS, DQS, DQS, RDQS, RDQS are disabled and ODT is turned off.
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