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Lucent Technologies Inc.
91
Advance Data Sheet
B900
July 1999
Baseband Signal Processor
9 Crystal Oscillator Electrical
Requirements and Characteristics
This section describes electrical requirements and
characteristics for high- and low-frequency crystal
oscillator circuits.
9.1
Crystal Oscillator
If the option for using the external crystal is chosen, the
electrical requirements and characteristics described
in this section apply.
9.1.1 Crystal Oscillator Power Dissipation
The typical power dissipation at 4.096 MHz of the inter-
nal high-frequency crystal oscillator circuit below is
6 mW at 5 V and 4 mW at 3 V.
9.1.2 Crystal Oscillator External Components
The crystal oscillator is enabled by connecting a crystal
across XTALA and XTALB, along with one external
capacitor from each of these pins to ground (see
Fig-ure 24). For most applications, 15 pF external capaci-
tors are recommended; however, larger values may be
necessary if precise frequency tolerance is required
ations). The crystal should be either fundamental or
overtone mode, parallel resonant, with a power dissi-
pation of at least 1 mW, and be specified at a load
capacitance equal to the total capacitance seen by the
crystal (including external capacitors and strays).
The series resistance of the crystal should be specified
to be less than half the absolute value of the negative
resistance shown in Figures
25 and
26 for the crystal
frequency.
5-4041
Figure 24. Fundamental Crystal Configuration
The following guidelines should be followed when
designing the printed-circuit board layout for a crystal-
based application:
s
Keep crystal and external capacitors as close to
XTALA and XTALB pins as possible to minimize
board stray capacitance.
s
Keep high-frequency digital signals such as DOUT
away from XTALA and XTALB traces to avoid
coupling.
CRYSTAL
XTAL1OUT
XTAL1IN
C 1
C 2
Re(Z)
CO