參數(shù)資料
型號: XCF128XFTG64C
廠商: Xilinx Inc
文件頁數(shù): 69/88頁
文件大?。?/td> 0K
描述: IC PROM SRL 128M GATE 64-FTBGA
標(biāo)準(zhǔn)包裝: 1
可編程類型: 系統(tǒng)內(nèi)可編程
存儲容量: 128Mb
電源電壓: 1.7 V ~ 2 V
工作溫度: -40°C ~ 85°C
封裝/外殼: 64-TBGA
供應(yīng)商設(shè)備封裝: 64-TFBGA
包裝: 托盤
產(chǎn)品目錄頁面: 601 (CN2011-ZH PDF)
其它名稱: 122-1578
Platform Flash XL High-Density Configuration and Storage Device
DS617 (v3.0.1) January 07, 2010
Product Specification
71
R
X-Ref Target - Figure 39
Notes:
1.
n + 1 is the number of data being programmed.
2.
Next Program data is an element belonging to buffer_Program[].data; Next Program address is an element belonging to
buffer_Program[].address
3.
Routine for Error Check by reading SR3, SR4 and SR1.
4.
To read the memory in Asynchronous mode, the CR15 Configuration Register bit must be written to 1.
Figure 39: Buffer Program Flowchart and Pseudocode
Buffer Program E8h
Command,
Start Address
Start
Write Buffer Data,
Start Address
YES
X = n
End
Write n(1),
Start Address
X = 0
Write Next Buffer Data,
Next Program Address
X = X + 1
Program
Buffer to Flash
Confirm D0h
Read Status
Register
NO
SR7 = 1
YES
Full Status
Register Check(3)
(2)
Read Status
Register
NO
SR7 = 1
YES
Buffer_Program_command (Start_Address,
n, buffer_Program[] )
/* buffer_Program [] is an array structure used to store the address and
data to be programmed to the Flash memory (the address must be within
the segment Start Address and Start Address+n) */
{
do {writeToFlash (Start_Address, 0xE8) ;
status_register=readFlash (Start_Address);
} while (status_register.SR7==0);
writeToFlash (Start_Address, n);
writeToFlash (buffer_Program[0].address, buffer_Program[0].data);
/*buffer_Program[0].address is the start address*/
x = 0;
while (x<n)
{ writeToFlash (buffer_Program[x+1].address, buffer_Program[x+1].data);
x++;
}
writeToFlash (Start_Address, 0xD0);
do {status_register=readFlash (Start_Address);
} while (status_register.SR7==0);
full_status_register_check();
}
DS617_33_101608
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