參數(shù)資料
型號(hào)： XCF128XFTG64C
廠商： Xilinx Inc
文件頁(yè)數(shù)： 61/88頁(yè)
文件大?。?/td> 0K
描述： IC PROM SRL 128M GATE 64-FTBGA
標(biāo)準(zhǔn)包裝： 1
可編程類型： 系統(tǒng)內(nèi)可編程
存儲(chǔ)容量： 128Mb
電源電壓： 1.7 V ~ 2 V
工作溫度： -40°C ~ 85°C
封裝/外殼： 64-TBGA
供應(yīng)商設(shè)備封裝： 64-TFBGA
包裝： 托盤
產(chǎn)品目錄頁(yè)面： 601 (CN2011-ZH PDF)
其它名稱： 122-1578
Platform Flash XL High-Density Configuration and Storage Device
DS617 (v3.0.1) January 07, 2010
Product Specification
64
R
Table 38: CFI Query System Interface Information
Offset
Data
Description
Value
01Bh
0017h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
1.7V
01Ch
0020h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
2V
01Dh
0085h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
8.5V
01Eh
0095h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
9.5V
01Fh
0004h
Typical time-out per single byte/word program = 2n s
16 s
020h
0009h
Typical time-out for Buffer Program = 2n s
512 s
021h
000Ah
Typical time-out per individual block erase = 2n ms
1s
022h
0000h
Typical time-out for full chip erase = 2n ms
–
023h
0004h
Maximum time-out for word program = 2n times typical
256 s
024h
0004h
Maximum time-out for Buffer Program = 2n times typical
8192 s
025h
0002h
Maximum time-out per individual block erase = 2n times typical
4s
026h
0000h
Maximum time-out for chip erase = 2n times typical
–
Table 39: Device Geometry Definition
Offset
Data
Description
Value
027h
0018h
Device Size = 2n in number of bytes
16 Mbytes
028h
029h
0001h
Flash Device Interface Code description
x16 Sync.
02Ah
02Bh
0006h
0000h
Maximum number of bytes in multi-byte program or page = 2n
64 bytes
02Ch
0002h
Number of identical sized erase block regions within the device bit 7 to 0 = x =
number of Erase Block Regions
2
02Dh
02Eh
007Eh
0000h
Erase Block Region 1 Information
Number of identical-size erase blocks = 007Eh +1
127
02Fh
030h
0000h
0002h
Erase Block Region 1 Information
Block size in Region 1 = 0200h
× 256 byte
128 Kbyte
031h
032h
0003h
0000h
Erase Block Region 2 Information
Number of identical-size erase blocks = 0003h +1
4
033h
034h
0080h
0000h
Erase Block Region 2 Information
Block size in Region 2 = 0080h
× 256 byte
32 Kbyte
035h
038h
Reserved
Reserved for future erase block region information
–
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