參數(shù)資料
型號(hào)： SI9925
廠商： NXP Semiconductors N.V.
英文描述： N-channel enhancement mode field-effect transistor
中文描述： N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 5/13頁(yè)
文件大?。?/td> 272K
代理商： SI9925
Philips Semiconductors
Si9925DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 20 July 2001
5 of 13
9397 750 08415
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
GS(th)
gate-source threshold voltage
I
DSS
drain-source leakage current
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
DS
= V
GS
;
Figure 9
V
DS
= 16 V; V
GS
= 0 V; T
j
= 25
°
C
V
DS
= 10 V; V
GS
= 0 V; T
j
= 70
°
C
V
GS
=
±
12 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 10 A;
Figure 7
and
8
V
GS
= 4.5 V; I
D
= 5 A;
Figure 7
and
8
V
GS
= 3 V; I
D
= 3.9 A;
Figure 7
and
8
V
GS
= 2.5 V; I
D
= 1 A;
Figure 7
and
8
0.8
25
38
41
50
62
1
5
100
45
50
60
80
V
μ
A
μ
A
nA
m
m
m
m
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
g
fs
forward transconductance
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
t
d(on)
turn-on delay time
t
r
turn-on rise time
t
d(off)
turn-off delay time
t
f
turn-off fall time
Source-drain (reverse) diode
V
SD
source-drain (diode forward) voltage I
S
= 2.3A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
V
DS
= 15 V; I
D
= 10 A
I
D
= 5 A; V
DS
= 6 V; V
GS
= 4.5 V;
Figure 13
14
9
2
2.6
14
13
35
9
20
40
30
60
30
S
nC
nC
nC
ns
ns
ns
ns
V
DD
= 6 V; R
D
= 6
; V
GS
= 10 V; R
G
= 6
0.81
60
1.2
150
V
ns
I
S
= 5 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V
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