參數(shù)資料
型號(hào)： SI9956DY
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁(yè)數(shù)： 1/13頁(yè)
文件大?。?/td> 253K
代理商： SI9956DY
Si9956DY
N-channel enhancement mode field-effect transistor
Rev. 01 — 16 July 2001
Product data
c
c
M3D315
1.
Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS
1
technology.
Product availability:
Si9956DY in SOT96-1 (SO8).
2.
Features
I
Low on-state resistance
I
Fast switching
I
TrenchMOS technology.
3.
Applications
I
DC to DC convertors
I
DC motor control
I
Lithium-ion battery applications
I
Notebook PC
I
Portable equipment applications.
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pin
Pinning - SOT96-1, simplified outline and symbol
Description
Simplified outline
Symbol
1
source 1 (s
1
)
SOT96-1 (SO8)
2
gate 1 (g
1
)
3
source 2 (s
2
)
4
gate 2 (g
2
)
5,6
drain 2 (d
2
)
7,8
drain 1 (d
1
)
1
2
3
4
5
6
7
8
pin 1 index
03ab52
g1
d1
s1
d2
g2
s2
03ab58
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI9956DYT1 制造商:SILICONIX 功能描述:*
SI9956DY-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC N T/R
SI9958DY 功能描述:MOSFET 20V 3.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI9958DY-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N/P-CH 20V 3.5A 8-Pin SOIC N T/R
SI9959DY 制造商:Vishay Siliconix 功能描述:MOSFET Transistor, Matched Pair, N-Channel, SO
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