參數(shù)資料
型號： SI9956DY
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁數(shù)： 6/13頁
文件大?。?/td> 253K
代理商： SI9956DY
Philips Semiconductors
Si9956DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 16 July 2001
6 of 13
9397 750 08414
Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03af77
0
5
10
15
0
0.5
1
1.5
2
2.5
3
V
DS
(V)
I
D
(A)
3.5 V
5 V
4.5 V
4 V
10 V
3 V
V
GS =
2 V
2.5 V
T
j
= 25 oC
03af79
0
5
10
15
0
1
2
3
4
5
V
GS
(V)
I
D
(A)
V
DS
> I
D
x R
DSon
T
j
= 150 oC
25 oC
03af78
0
0.02
0.04
0.06
0.08
0.1
0.12
0
5
10
15
I
D
(A)
R
DSon
(
)
T
j
= 25 oC
V
GS
= 4.5 V
5 V
10 V
03ad57
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
T
j
(oC)
a
a
R
DSon 25 C
°
)
---------------------------
=
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI9956DYT1 制造商:SILICONIX 功能描述:*
SI9956DY-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC N T/R
SI9958DY 功能描述:MOSFET 20V 3.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI9958DY-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N/P-CH 20V 3.5A 8-Pin SOIC N T/R
SI9959DY 制造商:Vishay Siliconix 功能描述:MOSFET Transistor, Matched Pair, N-Channel, SO
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