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參數(shù)資料
| 型號： | SI9947DY |
| 英文描述： | Dual P-Channel Enhancement-Mode MOSFET |
| 中文描述： | 雙P溝道增強(qiáng)型MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 87K |
| 代理商： | SI9947DY |
Si9947DY
Siliconix
S-47958—Rev. F, 15-Apr-96
1
Dual P-Channel Enhancement-Mode MOSFET
Product Summary
V
DS
(V)
r
DS(on)
( )
I
D
(A)
–20
0.10 @ V
GS
= –10 V
0.19 @ V
GS
= –4.5 V
3.5
2.5
Recommended upgrade: Si4947DY or Si4953DY
Lower profile/smaller size—see LITE FOOT equivalent: Si6955DQ
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Absolute Maximum Ratings (
T
A
= 25 C Unless Otherwise Noted
)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
–20
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current (T
J
= 150 C)
a
T
A
= 25 C
I
D
3.5
T
A
= 70 C
2.5
A
Pulsed Drain Current
I
DM
10
Continuous Source Current (Diode Conduction)
a
I
S
–1.7
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
W
T
A
= 70 C
1.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
a
R
thJA
62.5
C/W
Notes
a.
Surface Mounted on FR4 Board, t
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70134.
A SPICE Model data sheet is available for this product (FaxBack document #70636).
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| SIM-128CAN | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0010-5 00; No. of Positions: 11; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.25; Terminal Pitch (mm): 1.25; Current Rating(Amps)(Max.): 1; Operating Temperature Range (degrees C): -35 to 85; General Description: Housing; Single row; Crimping |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI9948AEY | 功能描述:MOSFET 60V 2.6A 2.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9948AEY | 制造商:Vishay Siliconix 功能描述:MOSFET DUAL PP SO-8 |
| SI9948AEY-E3 | 功能描述:MOSFET 60V 2.6A 2.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9948AEY-T1 | 功能描述:MOSFET 60V 2.6A 2.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9948AEY-T1-E3 | 功能描述:MOSFET 60V 2.6A 2.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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