參數(shù)資料
型號: NAND02GW4B2CZA1E
廠商: NUMONYX
元件分類: PROM
英文描述: 128M X 16 FLASH 3V PROM, 25000 ns, PBGA63
封裝: 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63
文件頁數(shù): 35/60頁
文件大?。?/td> 1335K
代理商: NAND02GW4B2CZA1E
Maximum ratings
NAND01G-B2B, NAND02G-B2C
10
Maximum ratings
Stressing the device above the ratings listed in Table 19: Absolute maximum ratings, may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 19.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
Min
Max
TBIAS
Temperature under bias
– 50
125
°C
TSTG
Storage temperature
– 65
150
°C
VIO
(1)
1.
Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins.
Maximum voltage may overshoot to VDD + 2 V for less than 20 ns during transitions on I/O pins.
Input or output voltage
1.8 V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V
VDD
Supply voltage
1.8 V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V
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