參數(shù)資料
型號： NAND02GW4B2CZA1E
廠商： NUMONYX
元件分類： PROM
英文描述： 128M X 16 FLASH 3V PROM, 25000 ns, PBGA63
封裝： 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63
文件頁數(shù)： 26/60頁
文件大?。?/td> 1335K
代理商： NAND02GW4B2CZA1E
Device operations
NAND01G-B2B, NAND02G-B2C
6.9
Read electronic signature
The device contains a manufacturer code and device code. To read these codes three steps
are required:
1.
One bus write cycle to issue the Read Electronic Signature command (90h)
2.
One bus write cycle to input the address (00h)
3.
Four bus read cycles to sequentially output the data (as shown in Table 14: Electronic
Table 14.
Electronic signature
Part number
byte/word 1
byte/word 2
byte/word 3
(see Table 15)
byte/word 4
(see Table 16)
Manufacturer
code
Device code
NAND01GR3B2B
20h
A1h
80h
15h
NAND01GW3B2B
F1h
1Dh
NAND01GR4B2B
0020h
B1h
55h
NAND01GW4B2B
C1h
5Dh
NAND02GR3B2C
20h
AAh
15h
NAND02GW3B2C
DAh
1Dh
NAND02GR4B2C
0020h
BAh
55h
NAND02GW42C
CAh
5Dh
Table 15.
Electronic signature byte 3
I/O
Definition
Value
Description
I/O1-I/O0
Internal chip number
0 0
0 1
1 0
1 1
1
2
4
8
I/O3-I/O2
Cell type
0 0
0 1
1 0
1 1
2-level cell
4-level cell
8-level cell
16-level cell
I/O5-I/O4
Number of simultaneously
programmed pages
0 0
0 1
1 0
1 1
1
2
4
8
I/O6
Interleaved programming
between multiple devices
0
1
Not supported
supported
I/O7
Cache program
0
1
Not supported
supported
相關(guān)PDF資料
PDF描述
NAND16GW3B4DN6E 4G X 4 FLASH 3V PROM, 25 ns, PDSO48
NAND512R4A2CZD6E 32M X 16 FLASH 1.8V PROM, 15000 ns, PBGA55
NB2762ASNR2G HF - EMI REDUCER; Package: TSOP-6; No of Pins: 6; Container: Tape and Reel; Qty per Container: 2500
NB2762ASNR2 EMI REDUCER SERIES; Package: TSOP-6; No of Pins: 6; Container: Tape and Reel; Qty per Container: 2500
NC7SB121P5X 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO5
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND04GR3B2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND04GR3B2DN6E 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
NAND04GR3B2DZL6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND04GR3B2EN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND04GR3B2EN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*