參數(shù)資料
型號(hào)： MPC5125YVN400
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 36/94頁(yè)
文件大小： 0K
描述： IC MCU 32BIT E300 324TEPBGA
標(biāo)準(zhǔn)包裝： 60
系列： MPC51xx
核心處理器： e300
芯體尺寸： 32-位
速度： 400MHz
連通性： CAN，EBI/EMI，以太網(wǎng)，I²C，USB OTG
外圍設(shè)備： DMA，WDT
輸入/輸出數(shù)： 64
程序存儲(chǔ)器類型： ROMless
RAM 容量： 32K x 8
電壓 - 電源 (Vcc/Vdd)： 1.08 V ~ 3.6 V
振蕩器型： 外部
工作溫度： -40°C ~ 125°C
封裝/外殼： 324-BBGA
包裝： 托盤
Electrical and Thermal Characteristics
MPC5125 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
41
1
4.1.4
Electrostatic Discharge
CAUTION
This device contains circuitry that protects against damage due to high-static voltage or
electrical fields. However, it is advised that normal precautions be taken to avoid
application of any voltages higher than maximum-rated voltages. Operational
reliability is enhanced if unused inputs are tied to an appropriate logic voltage level (GND
or VDD). Table 11 gives package thermal characteristics for this device.
Table 7. General I/O Pads1 — Drive Current, Slew Rate
NOTES:
1 General I/O—rise and fall times at drive load 50 pF.
Pad Type
Supply Voltage
Drive Select/Slew
Rate Control
Rise time
max (ns)
Fall time
max (ns)
Current
Ioh (mA)
Current
Iol (mA)
SpecID
General IO
VDD_IO = 3.3 V
Configuration 3 (11)
1.4
1.6
35
D3.41
Configuration 2 (10)
9.8
12
D3.42
Configuration 1 (01)
19
24
D3.43
Configuration 0 (00)
140
183
D3.44
Table 8. DDR I/O Pads1 — Drive Current, Slew Rate
NOTES:
1 DDR—rise and fall times at 50
transmission line impedance terminated to MV
TT (0.5 VDD_IO_MEM) + 4 pF load.
Pad Type
Supply Voltage
Drive Select/
Slew Rate Control
Rising slew
max (ns)2
2 Rising slew rate measured between 0.5 × V
DD_IO_MEM – 450 mV and 0.5 × VDD_IO_MEM + 50 mV for all modes.
Falling slew
max (ns)3
3 Falling slew rate measured between 0.5 × V
DD_IO_MEM + 50 mV and 0.5 × VDD_IO_MEM – 450 mV for all modes.
Current
Ioh (mA)
Current
Iol (mA)
SpecID
DDR
VDD_IO_MEM = 2.5 V (DDR) Configuration 3 (011)
0.45
16.2
D3.45
VDD_IO_MEM = 1.8 V (LPDDR
and SDR)
Configuration 0 (000)
0.8
4.6
D3.46
Configuration 1 (001)
8.1
D3.47
VDD_IO_MEM = 1.8 V (DDR2) Configuration 2 (010)
0.7
5.3
D3.48
Configuration 6 (110)
13.4
D3.49
VDD_IO_MEM = 3.3 V (SDR) Configuration 7 (111)
0.45
8
D3.50
Table 9. ESD and Latch-Up Protection Characteristics
Sym
Rating
Min
Max
Unit
SpecID
VHBM
Human body model (HBM) — JEDEC JESD22-A114-B
2000
—
V
D4.1
VMM
Machine model (MM) — JEDEC JESD22-A115
200
—
V
D4.2
VCDM
Charge device model (CDM) — JEDEC JESD22-C101
250
—
V
D4.3
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